MONDE WIRELESS INC
Millimeter-wave RF front-end switch circuits using N-polar GaN MMIC process for frequencies up to 110 GHz
- Sector
- Semiconductors
- Headquarters
- Goleta, CA
- Founded
- 2020
- Latest Form D
- $250K, May 2021
- Total capital
- $7.5M
- Federal grants
- $1.1M
- 4 awards · 2021–2025
- Rank in peer group#57 of 68
- Private capital raised
- $250K
- 1 Form D · last May 2021
- 65 months since last filing
- Federal contracts
- $6.2M
- 6 awards · Defense
- Rank in Semiconductors#51 of 707
- Granted patents
- 4
- 17 pending · first 2023
- Rank in peer group#13 of 68
Capital timeline
Latest events
- Federal grantDefense · Phase II · New Research And Development Effort Titled Removing Heat From Next Generation Wireless Systems.$685K
- Federal contractDefense · New Research And Development Effort Titled Removing Heat From Next Generation Wireless Systems.$1.2M
- Federal grantDefense · Phase I · Next Generation Gallium Nitride (gan) Technology For Efficient Spectral Advantage$75K
- Federal contractDefense · Next Generation Gallium Nitride (gan) Technology For Efficient Spectral Advantage$75K
- Federal grantDefense · Phase I · N-polar GaN HEMTs for high performance RF switching$140K
- Federal contractDefense · Under This Effort, Contractor Will Evaluate Manufacturable Fabrication Techniques For N-polar Gan High Electron Mobility Transistors.$2.4M
- Federal contractDefense · Research And Development$1.5M
- Private capital raisedForm D · SEC · 1st filing$250K
Show 3 earlier federal awards
- Federal contractDefense · Thermally Managed N-polar Gan Fets EO14042$700K
- Federal grantEnergy · Phase I · Novel Materials Structure for Efficient and Cost-Effective Direct Emission Solid-State Lighting$200K
- Federal contractDefense · Kick-off Briefing Materials & Fwa Cert.$240K
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 68 peers
Line = medianSemiconductors · Device
- Federal grantsBelow median
- Granted patents#13 · top 19%
- Linked publications#2 · top 3%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
Researcher links verified by same-company patents and grants- Brian RomanczykResearcherDirectorLinked by 3 patents
- Matthew GuidryResearcherExecutive Officer, DirectorLinked by 1 patent · $140K in grants as PI
- Bernd KellerResearcherExecutive Officer, DirectorLinked by $200K in grants as PI
What it has protected
USPTO · 4 granted of 21- PendingN-polar Hemt Structures With N+ Contact LayersUSPTOApplication 19104997
- PendingSemiconductor Device For RF Integrated CircuitUSPTOApplication 18990101
- PendingDevices For Integrated Front-end CircuitsUSPTOApplication 18929367
Show all 21 patent records
- N-polar Hemt Structures With N+ Contact LayersJan 8, 2026 · Application 19104997Pending
- Semiconductor Device For RF Integrated CircuitApr 17, 2025 · Application 18990101Pending
- Devices For Integrated Front-end CircuitsFeb 13, 2025 · Application 18929367Pending
- N-polar Iii-nitride Device Structures With A P-type LayerJan 16, 2025 · Application 18901818Pending
- Semiconductor Device For RF Integrated CircuitDec 31, 2024 · US 12,183,676Granted
- Devices For Integrated Front-end CircuitsOct 29, 2024 · US 12,132,052Granted
- N-polar Iii-nitride Device Structures With A P-type LayerJul 11, 2023 · US 11,699,723Granted
- Semiconductor Device For RF Integrated CircuitJan 17, 2023 · US 11,557,539Granted
- N-polar Hemt Structures With N+ Contact LayersApplication 63416738Pending
- Devices For Integrated Front-end CircuitsApplication PCTUS2022038873Pending
- N-polar Iii-nitridedevice Structures With A P-type LayerApplication PCTUS2022022441Pending
- Semiconductor Device For RF Integrated CircuitApplication PCTUS2021064364Pending
- Gate-bonded Transistors And Methods Of Forming Gate-bonded TransistorsApplication PCTUS2025059412Pending
- Hemt Structures Grown On Miscut SubstratesApplication 19509522Pending
- Iii-n Dual Gate DevicesApplication 19476022Pending
- Methods And Systems For The Deposition Of N-polar Iii-nitrides On Silicon SubstratesApplication PCTUS2025031464Pending
- Gate-bonded Transistors And Methods Of Forming Gate-bonded TransistorsApplication 63733888Pending
- Methods And Systems For The Deposition Of N-polar Iii-nitrides On Silicon SubstratesApplication 63654166Pending
- N-polar Hemt Structures With N+ Contact LayersApplication PCTUS2023035316Pending
- Hemt Structures Grown On Miscut SubstratesApplication PCTUS2023029738Pending
- Iii-n Dual Gate DevicesApplication PCTUS2023018828Pending
Recent research by its founders
- 28.1 Importance of GaN for 5G and Solid-State mm-Wave Circuits of the Future20260 cites
- Bias-Insensitive High Linearity of N-Polar Deep Recess GaN HEMTs With Regrown GaN Cap20260 cites
- Recent Advancements in N-polar GaN HEMT Technology20257 cites
Related companies, and why
- RECON RF, INC.Similar federal contract value in Semiconductors · $6.2M in contracts
- Custom Mmic Design Services, Inc.Similar federal contract value in Semiconductors · $6.2M in contracts
- Checkpoint Technologies LLCSimilar federal contract value in Semiconductors · $6.2M in contracts
- EUCLID BEAMLABS LLCSimilar federal contract value in Semiconductors · $6M in contracts
- FABMETRIX INCSimilar federal contract value in Semiconductors · $5.8M in contracts
- EPACK, INC.Similar federal contract value in Semiconductors · $5.8M in contracts
Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .