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United Silicon Carbide, Inc.

MONMOUTH JUNCTION, NJ · Semiconductors · Acquired

Radiation-hardened silicon carbide (SiC) JFET cascode switches for exploding foil initiators

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Updated · unitedsic.com

Sector
Semiconductors
Headquarters
MONMOUTH JUNCTION, NJ
Latest Form D
$2M, Jul 2016
Total capital
$34.4M
Federal grants
$434K
3 awards · 2015–2018
Rank in peer group#28 of 49
Private capital raised
$3M
2 Form D · last Jul 2016
123 months since last filing
Federal contracts
$31M
23 awards · Defense, NASA
Rank in Semiconductors#10 of 707
Granted patents
26
14 pending · first 2014
Rank in peer group#2 of 49

Capital timeline

2005200720092011201320152017FEDERAL ↑EQUITY ↓Cumulative $34.4M$2.9M$750K$750K$20.7M$750K$750K1st Form D$1M2nd Form D$2M
2005200920132017FEDERAL ↑EQUITY ↓Cumulative $34.4M$2.9M$750K$750K$20.7M1st Form D$1M2nd Form D$2M

Latest events

  • Federal grantDefense · Phase I · High Power Solid State Electronic Switch for Use in Exploding Foil Initiator Applications$125K
  • Federal contractNASA · Igf::ot::igf NASA Needs Efficient, Low Mass, Low Volume Power Electronics For A Wide Variety Of Applications And Missions. Silicon Carbide (sic) Switches Provide Fast, Low Loss Switching, Low On-resistance And High Breakdown Voltage To Potentially Meet This Need. Gate Drivers Are A Key Component To Fully Realize The System Level Advantages That Sic Power Switches Can Provide. By Implementing Gate Drivers In Sic, They Can Tolerate Extreme Temperatures (500 Deg. C) Allowing Them To Be Collocated $124K
  • Private capital raisedForm D · SEC · 2nd filing$2M
  • Federal contractDefense · Igf::ot::igf 6500V-100A Sic Jfet-based Half-bridge Module (N161-066-0533)$80K
  • Federal grantEnergy · Phase I · High Current SiC Cascodes for Electric Drive Vehicle Power Electronics$155K
  • Federal contractNASA · Igf::ot::igf Radiation Tolerant, Extreme Temperature Capable Electronics Are Needed For A Variety Of Planned NASA Missions. For Example, Insitu Exploration Of Venus And Long Duration Europa-jupiter Missions Will Expose Electronics To Temperatures Up To 500 ?c And Radiation Of 3 Mrad (si) Total Dose. During This Program, United Silicon Carbide Will Extend The Capability Of Its Sic Jfet Integrated Circuit (ic) Fabrication Technology To Produce Electronics Compatible With Such Extreme Environments.$750K
  • Federal contractNASA · Igf::ot::igf Radiation Tolerant, Extreme Temperature Capable Electronics Are Needed For A Variety Of Planned NASA Missions. For Example, In-situ Exploration Of Venus And Long Duration Europa-jupiter Missions Will Expose Electronics To Temperatures Up To 500 Deg.c And Radiation Of 3 Mrad (si) Total Dose. During This Program, United Silicon Carbide Will Extend The Capability Of Its Sic Jfet Integrated Circuit Fabrication Technology To Produce Electronics Compatible With Such Extreme Environments. $124K
  • Private capital raisedForm D · SEC · 1st filing$1M
Show 20 earlier federal awards
  • Federal grantEnergy · Phase I · High Current SiC Schottky Diodes for Electric Drive Vehicle Power Electronics$155K
  • Federal contractDefense · Igf::ot::igf SBIR II Scalable Wide Bandgap Integrated Technology$750K
  • Federal contractNASA · Igf::ot::igf Solar-blind Ultraviolet (uv) Imaging Is Needed In The Fields Of Astronomy, National Defense, And Biochemistry. United Silicon Carbide, Inc. Proposes To Develop A Monolithic, Solar-blind Uv Image Sensor With 320 X 256 Pixels On A 25 Micron Pitch With A Frame Rate Of 50 Frames Per Second And Pixel Fill Factor Over 80%. A Silicon Carbide (sic) Integrated Circuit Technology That Is Compatible With Production In Commercial Silicon Fabs Will Be Used To Fabricate The Sensors. Sic Is An Id$745K
  • Federal contractDefense · Igf::ot::igf Silicon Carbide Vertical Jfet Power Electronics For Mea$20.7M
  • Federal contractDefense · Igf::ot::igf Scalable Wide Bandgap Integrated Circuit Technology$150K
  • Federal contractNASA · Igf::ot::igf Solar-blind Ultraviolet (uv) Imaging Is Critically Important In The Fields Of Space Astronomy, National Defense, And Bio-chemistry. United Silicon Carbide, Inc. Proposes To Develop And Commercialize A Unique Jfet-based Monolithically-integrated Radiation-tolerant Solar Blind Active Pixel Sensor (aps) Uv Imager. Silicon Carbide Is The Ideal Materials System Due To Its Negligible Dark Currents, Excellent Radiation Tolerance, Intrinsic Insensitivity To Visible And Near IR Light, And T$125K
  • Federal contractNASA · Igf::ot::igf United Silicon Carbide, Inc. Proposes To Develop A Novel Compact, Efficient And High-temperature Power Module, Based On Unique Co-packaging Approach Of Normally-off Silicon (si) Mosfet With Silicon Carbide (sic) Normally-on Power Jfet In A Cascode Configuration. A Much Desired Silicon Mos Gate Control Is Provided Readily Compatible With The Conventional Gate Drivers, Making A Proposed Module A Plug-in Replacement For Conventional Si Igbt Modules Offering Smaller Size And Higher Pow$124K
  • Federal contractDefense · SBIR Phase 1, Topic # OSD11-EP1$150K
  • Federal contractNASA · This Small Business Innovation Research Phase I Project Will Address The Needs Of Space Astronomy, Military Threat Detection, And Scientific Research For Image Sensors That Are Sensitive In The Ultraviolet While Insensitive In The Visible Spectrum. This Is Because Solar Illuminated Backgrounds Are Orders Of Magnitude Greater Than The Ultraviolet Radiation Of Interest (solar Blocking Filters Exhibit Low Uv Transmission And Scattered Light). This Program Will Develop Monolithic Imaging Arrays Made$125K
  • Federal contractDefense · Phase II SBIR To United Silicon Carbide For Topic # A10-132, Titled "high Temperature Silicone Carbide Gate Driver".$728K
  • Federal contractDefense · Phase I SBIR$120K
  • Federal contractDefense · Mda SBIR Phase 2$699K
  • Federal contractDefense · Ph I Research & Development$100K
  • Federal contractNASA · Three Linear Array Detectors$49K
  • Federal contractDefense · Basic Effort SBIR Phase I$100K
  • Federal contractDefense · SBIR I$100K
  • Federal contractDefense · A Novel Approach To Packaging High-power And High-temperature Sic Modules For Double-sided Cooling$750K
  • Federal contractDefense · Reliable, High Temperature Silicon Carbide Mosfet.$730K
  • Federal contractDefense · Basic$750K
  • Federal contractDefense · 200511!009147!2100!W56HZV!TACOM - Warren !W56HZV05C0544 !a!n! !y! ! !20050803!20070915!042068101!042068101!042068101!N!UNITED Silicon Carbide Inc !100 Jersey Ave !new Brunswick !NJ!08901!07690!035!34!BRIDGEWATER !somerset !new JERSEY!+000000150000!N!N!000000000000!AC42!RDTE/TANK - Automotive-applied Research !S1 !services !000 !* !221122!E! !3! ! ! ! ! !202$2.9M

Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.

Federal first

111months

from United Silicon Carbide, Inc.’s first federal award to its first private round.

First federal award · Aug 2005
Defense · $2.9M
First Form D · Nov 2014
$1M · 1st Form D
Awards before first raise
19 awards

An association in public records, not a cause or a prediction.

Standing among 49 peers

Line = median

Semiconductors · Device

  • Federal grantsBelow median
  • Granted patents#2 · top 4%
  • Linked publications#3 · top 6%

Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.

Founders and team

Researcher links verified by same-company patents and grants
  • Anup Christopher BhallaResearcherExecutive OfficerLinked by 5 patents
  • Betsy Christopher CottonExecutive OfficerNamed in SEC Form D filings
  • Derek Christopher LidowDirectorNamed in SEC Form D filings
  • Greg Christopher OlsenDirectorNamed in SEC Form D filings
  • J. Christopher DriesExecutive Officer, DirectorNamed in SEC Form D filings
  • Mari-Anne Christopher GagliardiExecutive OfficerNamed in SEC Form D filings
Show all 7 people
  • Marshall Christopher CohenExecutive Officer, DirectorNamed in SEC Form D filings

What it has protected

USPTO · 26 granted of 40
Show all 40 patent records

Recent research by its founders

  • Extreme Environment Integrated Circuits Based on Enhancement Mode SiC JFETs20200 cites
  • High-Performance SIP Half-Bridge IPM Based on 35mΩ/1200V SiC Stack-Cascode20200 cites
  • Ultra-high speed 7mohm, 650V SiC half-bridge module with robust short circuit capability for EV inverters20199 cites

Related companies, and why

Sources

Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.

How to read this page

Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.

Data freshness

SEC Form D filings through . SBIR and STTR awards through .