SIXPOINT MATERIALS, INC.
low-defect gallium nitride (GaN) epi-ready substrates manufactured via ammonothermal crystal growth and precision wafering/polishing
- Sector
- Semiconductors
- Headquarters
- Buellton, CA
- Total capital
- $3.2M
- Federal grants
- $3.2M
- 4 awards · 2016–2020
- Rank in peer group#10 of 17
- Private capital raised
- None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
- Federal contracts
- None on recordNo federal contract awards found.
- Granted patents
- 15
- 25 pending · first 2013
- Rank in peer group#1 of 17
Capital timeline
Latest events
- Federal grantEnergy · Phase II · Low-cost, Low-defect, 2" GaN Epi-ready Substrates Processed with E-Grinding$1.1M
- Federal grantEnergy · Phase II · Low-cost, low-defect, 2" GaN epi-ready substrates processed with E-Grinding$1M
- Federal grantDefense · Phase I · Next-Generation, Power-Electronics Materials for Naval Aviation Applications$125K
- Federal grantEnergy · Phase II · Lowcost, lowdefect, 2" GaN epiready substrates processed with EGrinding$1M
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 17 peers
Line = medianSemiconductors · Material
- Federal grantsBelow median
- Granted patents#1 · top 6%
- Linked publications#4 · top 24%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
No founders are linked to this company yet.
Founders appear once a person is matched to the company through its own patents, grants or filings. We never infer people from social profiles.
Checked: USPTO inventors; federal award principal investigators; SEC Form D related persons · Oct 23, 2026
Claim this profile to add your teamWhat it has protected
USPTO · 15 granted of 40- PendingGroup III Nitride Vertical Photoconductive Semiconductor SwitchUSPTOApplication 18716922
- PendingGaN TRENCH MOSFET AND FABRICATION METHODUSPTOApplication 18222411
- GrantedLow-dislocation Bulk Gan Crystal And Method Of Fabricating SameUSPTOUS 11,767,609
Show all 40 patent records
- Group III Nitride Vertical Photoconductive Semiconductor SwitchMay 15, 2025 · Application 18716922Pending
- GaN TRENCH MOSFET AND FABRICATION METHODJan 18, 2024 · Application 18222411Pending
- Low-dislocation Bulk Gan Crystal And Method Of Fabricating SameSep 26, 2023 · US 11,767,609Granted
- Terahertz Gunn Oscillator Using Gallium NitrideAug 29, 2023 · US 11,742,800Granted
- Low-dislocation Bulk Gan Crystal And Method Of Fabricating SameAug 15, 2019 · Application 16271325Pending
- Electronic Device Using Group III Nitride Semiconductor And Its Fabrication MethodJul 16, 2019 · US 10,355,115Granted
- Seed Crystal For Growth Of Gallium Nitride Bulk Crystal In Supercritical Ammonia And Fabrication MethodJul 16, 2019 · US 10,354,863Granted
- Seed Crystal For Growth Of Gallium Nitride Bulk Crystal In Supercritical Ammonia And Fabrication MethodMay 14, 2019 · US 10,287,709Granted
- Seed Crystal For Growth Of Gallium Nitride Bulk Crystal In Supercritical Ammonia And Fabrication MethodMar 28, 2019 · Application 15716167Pending
- Seed Crystal For Growth Of Gallium Nitride Bulk Crystal In Supercritical Ammonia And Fabrication MethodMar 26, 2019 · US 10,242,868Granted
- Electronic Device Using Group III Nitride Semiconductor And Its Fabrication MethodNov 27, 2018 · US 10,141,435Granted
- Electronic Device Using Group III Nitride Semiconductor And Its Fabrication MethodNov 20, 2018 · US 10,134,884Granted
- Electronic Device Using Group III Nitride Semiconductor And Its Fabrication MethodNov 20, 2018 · US 10,134,883Granted
- High-pressure Vessel For Growing Group III Nitride Crystals And Method Of Growing Group III Nitride Crystals Using High-pressure Vessel And Group III Nitride CrystalOct 2, 2018 · US 10,087,548Granted
- Methods For Producing Improved Crystallinity Group Iii-nitride Crystals From Initial Group Iii-nitride Seed By Ammonothermal GrowthMay 29, 2018 · US 9,985,102Granted
- Methods For Producing Improved Crystallinity Group Iii-nitride Crystals From Initial Group Iii-nitride Seed By Ammonothermal GrowthJul 13, 2017 · Application 15472125Pending
- Method For Producing Group III Nitride Wafers And Group III Nitride WafersJun 22, 2017 · Application 15452700Pending
- Growth Reactor For Gallium-nitride Crystals Using Ammonia And Hydrogen ChlorideSep 13, 2016 · US 9,441,311Granted
- Method Of Growing Group III Nitride Crystals Using High Pressure VesselJan 14, 2016 · Application 14864839Pending
- Composite Substrate Of Gallium Nitride And Metal OxideDec 29, 2015 · US 9,224,817Granted
- Reactor Design For Growing Group III Nitride Crystals And Method Of Growing Group III Nitride CrystalsNov 6, 2014 · Application 14330419Pending
- Methods For Producing Improved Crystallinity Group Iii-nitride Crystals From Initial Group Iii-nitride Seed By Ammonothermal GrowthJul 31, 2014 · Application 14228628Pending
- Method For Testing Group Iii-nitride Wafers And Group Iii-nitride Wafers With Test DataNov 19, 2013 · US 8,585,822Granted
- Method For Testing Group Iii-nitride Wafers And Group Iii-nitride Wafers With Test DataOct 15, 2013 · US 8,557,043Granted
- High-pressure Vessel For Growing Group III Nitride Crystals And Method Of Growing Group III Nitride Crystals Using High-pressure Vessel And Group III Nitride CrystalAug 22, 2013 · Application 13847222Pending
- High-pressure Vessel For Growing Group III Nitride Crystals And Method Of Growing Group III Nitride Crystals Using High-pressure Vessel And Group III Nitride CrystalAug 15, 2013 · Application 13784210Pending
- Seed Selection And Growth Methods For Reduced-crack Group III Nitride Bulk CrystalsApplication 62106709Pending
- Group III Nitride Substrates And Their Fabrication MethodApplication 62087746Pending
- Group III Nitride Crystals, Their Fabrication Method, And Method Of Fabricating Crystals In Supercritical AmmoniaApplication 62086699Pending
- Substrates For Growing Group III Nitride Crystals And Their Fabrication MethodApplication 62049036Pending
- Group III Nitride Bulk Crystals And Their Fabrication MethodApplication 62002488Pending
- High Pressure Reactor For Supercritical AmmoniaApplication 61973359Pending
- Group III Nitride Bulk Crystals And Their Fabrication MethodApplication 61928883Pending
- Electronic Device Using Group III Nitride Semiconductor And Its Fabrication MethodApplication 61845043Pending
- Group III Nitride Wafers And Fabrication Method And Testing MethodApplication 61706012Pending
- Method Of Growing Group III Nitride CrystalsApplication 61705540Pending
- Synthesis Method Of Transition Metal Nitride And Transition Metal NitrideApplication PCTUS2012042689Pending
- Ultracapacitors Using Transition Metal Nitride-containing Electrode And Transition Metal NitrideApplication PCTUS2012042679Pending
- Growth Reactor For Gallium-nitride Crystals Using Ammonia And Hydrogen ChlorideApplication PCTUS2010033790Pending
- Methods For Producing Gan Nutrient For Ammonothermal GrowthApplication PCTUS2009065513Pending
Recent research by its founders
- >10 kV GaN-on-GaN PN power diode with double field plate structure20261 cites
- Three-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation20256 cites
- Growth of Semi‐Insulating Mn–GaN by the Near‐Equilibrium Ammonothermal Method and Its Application to a High‐Voltage Photoconductive Semiconductor Switch20251 cites
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Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .