OZARK INTEGRATED CIRCUITS INC

Fayetteville, AR · Semiconductors · Private

Silicon carbide bipolar junction phototransistors and UV-detecting focal plane arrays for space applications

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Updated Oct 23, 2026 · ozarkic.com

Sector: Semiconductors
Headquarters: Fayetteville, AR
Total capital: $27.9M

Federal grants: $13.5M; 21 awards · 2017–2024; Rank in peer group#5 of 72
Private capital raised: None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
Federal contracts: $14.4M; 18 awards · NASA, Defense; Rank in Semiconductors#27 of 707
Granted patents: None on recordNo USPTO grants. Applications publish after 18 months.

Capital timeline

Latest events

Apr 2024Federal grantDefense · Phase II · System Integration Of Non-volatile Ferroelectric Memory For High Temperature Applications$1.8M
Apr 2024Federal contractDefense · System Integration Of Non-volatile Ferroelectric Memory For High Temperature Applications$3.4M
Mar 2024Federal contractDefense · The High Operational Temperature Sensors (hots)program Will Develop A Technology For High-bandwidth, High-dynamic-range Sensing At High Temperature.$5.6M
Oct 2023Federal contractDefense · Sbir/sttr Phase II R&d$1.5M
Aug 2023Federal grantEnergy · Phase II · High-Temperature Electronics for Low-Cost, In-Line Impurity Monitoring of Salt-Cooled Reactors$1.1M
Jul 2023Federal grantDefense · Phase I · A 4H-SiC Thin-Film Process for the Manufacture of UV-Detecting VISIR-Blind Integrated Circuits$140K
Jul 2023Federal grantEnergy · Phase I · High-Temperature Flow Rate Instrument for Geothermal Reservoir Monitoring$206K

Show 32 earlier federal awards

Apr 2023Federal grantEnergy · Phase II · High-Temperature Electronics for Real-Time, In-Line Monitoring of Molten Salt Reduction and Oxidation (RedOx)$1.1M
Jul 2022Federal contractDefense · Sbir/sttr Phase I Research & Development Packaging Methods For Reliable And Scalable High Temperature Electronics$155K
Jul 2022Federal grantNASA · Phase I · High Temperature Additively Manufactured ROM for Venus Surface Operation$156K
Jun 2022Federal grantEnergy · Phase I · High-Temperature Electronics for Low-Cost, In-Line Impurity Monitoring for Salt-Cooled Reactors$206K
Jun 2022Federal grantDefense · Phase II · High Fidelity Analog Integration Techniques for High Temperature Applications$1.5M
Feb 2022Federal grantEnergy · Phase I · High-Temperature Electronics for Real-Time, In-Line Monitoring of Molten Salt Reduction and Oxidation (RedOx)$200K
May 2021Federal grantDefense · Phase II · High-Temperature Instrumentation for the Advancement of Hypersonic Engine Development$1.7M
Mar 2021Federal contractDefense · Packaging And Test Of Lateral Sic Integrated Circuits For 800OC Operation$238K
Feb 2021Federal grantDefense · Phase I · Supersonic Capable Signal Conditioning Electronics for Turbine Engines$50K
Aug 2020Federal contractNASA · High Fidelity Analog Integration Techniques For Venus Surface Data Acquisition$125K
Aug 2020Federal grantEnergy · Phase II · Ruggedized Communication Technology for Enabling High-Temperature Directional Drilling (Phase 2)$1.1M
Jul 2020Federal grantDefense · Phase II · High Temperature By Design (HTBD) Techniques for a Reliable, High Performance Microcontroller$750K
Jul 2020Federal contractNASA · Extreme Environment System Integration Techniques For Venus In-situ Processing$760K
Jun 2020Federal grantEnergy · Phase I · High-Temperature Electronics for Real-Time, In-Line Impurity Monitoring for FLIBE-Cooled Reactors$206K
Dec 2019Federal grantDefense · Phase I · High-Temperature Instrumentation for the Advancement of Hypersonic Engine Development$225K
Aug 2019Federal contractNASA · NASA Has Demonstrated A Resolve To Land Instruments On The Corrosive, High-pressure (~100 Bar), High-temperature (470 C) Surface Of Venus.$125K
Jul 2019Federal contractNASA · NASA Has Invested Significant Time And Money In Developing High-temperature Technologies For Venus Surface Exploration. Due To The Harsh Environment Outside An Insulated Lander Body (~462OC, 92 Bar Pressure, CO2 Atmosphere), Conventional, High-trl Components And Materials Will Not Survive, Even For A Short Duration Mission Lasting Only A Few Hours..to Meet This Need, Ozark Ic Has Worked With Nasa's Jfet-r Integrated Circuit Technology (under License Since 2016) To Provide Sensing And Actuation S$755K
Jul 2019Federal grantEnergy · Phase I · Ruggedized Communication Technology for Enabling High-Temperature Directional Drilling$205K
Dec 2018Federal contractDefense · High Temperature By Design (htbd) Techniques For A Reliable, High Performance, Microcontroller$149K
Aug 2018Federal grantEnergy · Phase II · Rugged, Long-Life Flow Monitoring for Enhanced Geothermal Systems$1M
Jul 2018Federal contractNASA · NASA Manned And Robotic Missions To The Surface Of Planetary Or Airless Bodies Require Entry, Descent, And Landing (edl). For Many Of These Missions, Edl Represents One Of The Riskiest Phases Of The Mission. Despite The Criticality Of The Edl Phase, NASA Has Historically Gathered Limited Engineering Data From Such Missions, And Use Of The Data For Real-time Guidance, Navigation And Control (gn&c) During Edl For Precise Landing (aside From Earth) Has Also Been Limited. NASA Scientists Have Identi$125K
Jul 2018Federal contractNASA · NASA Has Demonstrated A Resolve For A Flagship Mission In The Coming Years To Revisit Venus And Land Instruments On The Surface. Venus Has A Corrosive, High-pressure (~100 Bar), High-temperature (470 C) Environment. A Motor Drive Is The Major Theme That Runs Through The Most Critical Needs For Optimum Geological And Atmospheric Exploration On Venus. An Electronically-controlled Motor, Operating At 470 C/100 Bar, Is The Single Most Significant Demonstration Of The Ability To Perform Robotic Venus$124K
Oct 2017Federal grantDefense · Phase II · Packaging and Assemblies for High-temperature Intelligent Aerospace Controls$1.2M
Jun 2017Federal grantEnergy · Phase I · Large Area, Scalable UV Detectors Based on Silicon Carbide$155K
Jun 2017Federal grantEnergy · Phase I · Rugged, Long-Life Flow Monitoring for Enhanced Geothermal Systems$155K
Feb 2017Federal grantEnergy · Phase I · Advanced Data Logging Electronics for High Pressure and Temperature Subsurface Environments$154K
Jul 2016Federal contractDefense · Igf::ot::igf Ltcc Packaging And Assemblies For Low-cost, Reliable, High-temperature Intelligent Aerospace Controls$150K
Jun 2016Federal contractNASA · Igf::ot::igf NASA Has Demonstrated A Resolve For A Flagship Mission In The Coming Years To Revisit Venus And Land Instruments On The Surface. Venus Has A Corrosive, High Pressure (~100 Bar), High-temperature (up To 500 C) Environment Presenting Extreme Design Challenges For Lander Electronics. The Ability To Establish Simple Wire-line Communications Between Circuits Operating In Extremely Disparate Temperature Domains Is A Critical Need. Different Technologies Have Specific Strengths (complexit$125K
Apr 2016Federal contractNASA · Igf::ot::igf Photodiode (apd) Detectors. These State-of-the-art Sic Photodiodes Use The Wafer Substrate As One Node Of The Device, Thereby Making Monolithic Integration Of The Device With Control Or Analysis Circuitry Difficult, If Not Impossible. In Phase I, Ozark Ic Demonstrated That Its New (patent-pending) Photo Detecting Devices Are Suitable For Integration In Sic-based Low-voltage Integrated Circuit Processes. By Virtue Of Their Construction, The Photo-generation Occurs Efficiently And Wit$754K
Jun 2015Federal contractNASA · Igf::ot::igf NASA Has A Need For Electronics That Can Support Proposed Flagship Missions Such As A Venus Surface Lander. Devices That Can Operate At Temperatures Of Up To 500?C Are Desired. Ozark Ic And Its Partner, The University Of Arkansas, Have Created The World's Largest Known Library Of Cmos Silicon-carbide (sic) Analog And Mixed-signal Circuits, Intellectual Property (ip) And Packages That Can Operate At Very High Temperatures. The Key Next Component Is A General-purpose Sic Microcontroll$125K
Jun 2015Federal contractNASA · Igf::ot::igf Commercial Silicon Carbide (sic)-based Photonic Sensors Typically Use P I N Photodiode And Reversed-biased Avalanche Photodiode (apd) Detectors. These State-of-the-art Sic Photodioides Use The Wafer Substrate As One Node Of The Device, Thereby Making Monolithic Integration Of The Device With Control Or Analysis Circuitry Difficult, If Not Impossible. Ozark Ic's New (patent Pending) Photo Detecting Devices Are Inherently Suitable For Integration In Sic-based Low- Oltage Integrated Ci$121K
Feb 2012Federal contractNASA · There Is A Continual Drive To Move Electronics Out Of The "warm Box" To Their Point Of Use On Space Platforms. This Requires Electronics That Can Operate Reliably Over A Wide Range Of Temperatures And In The Presence Of Radiation. The Range Of Functions Needed At Various Points Across A Given Platform Require Use Of Digital, Analog And High-voltage Circuits, Partitioned Either Independently Or In Combinations On The Same Chips. Currently, There Is No "common Denominator" Integrated Circuit Proce$125K

Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.

Standing among 72 peers

Line = median

Semiconductors · Device

Federal grants#5 · top 7%

Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.

Founders and team

No founders are linked to this company yet.

Founders appear once a person is matched to the company through its own patents, grants or filings. We never infer people from social profiles.

Checked: USPTO inventors; federal award principal investigators; SEC Form D related persons · Oct 23, 2026

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What it has protected

No granted patents are on record.

USPTO usually publishes applications 18 months after filing, so recent applications may not be visible yet. Patents assigned under a different entity name won’t match.

Checked: USPTO granted patents and published applications · Oct 23, 2026

OpenLight Photonics, Inc.Similar federal contract value in Semiconductors · $15.5M in contracts
Empower RF Systems, Inc.Similar federal contract value in Semiconductors · $14.9M in contracts
GENESIC SEMICONDUCTOR INC.Similar federal contract value in Semiconductors · $14.4M in contracts
AXELLIO INC.Similar federal contract value in Semiconductors · $14.2M in contracts
Eureka AerospaceSimilar federal contract value in Semiconductors · $13.4M in contracts
INDIANA MICROELECTRONICS, LLCSimilar federal contract value in Semiconductors · $12.5M in contracts

Sources

Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.

How to read this page

Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.

Data freshness

SEC Form D filings through Oct 23, 2026. SBIR and STTR awards through Oct 21, 2026.