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GENESIC SEMICONDUCTOR INC.

Dulles, VA · Semiconductors · Acquired

Stackable silicon carbide (4H-SiC) power semiconductor devices (DRSDs) with ratings exceeding 20 kV and 1 kA for high-voltage, high-power applications

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Updated · genesicsemi.com

Sector
Semiconductors
Headquarters
Dulles, VA
Total capital
$20.9M
Federal grants
$6.5M
7 awards · 2015–2021
Rank in peer group#23 of 72
Private capital raised
None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
Federal contracts
$14.4M
20 awards · Defense, Commerce, NASA
Rank in Semiconductors#26 of 707
Granted patents
26
12 pending · first 2020
Rank in peer group#4 of 72

Capital timeline

20072009201120132015201720192021FEDERAL ↑EQUITY ↓Cumulative $20.9M$1.5M$2M$1.8M$4.7M$1.5M$2M
2007201120152019FEDERAL ↑EQUITY ↓Cumulative $20.9M$2M$1.8M$4.7M$2M

Latest events

  • Federal grantDefense · Phase I · 4H-SiC BiCMOS Development on 6” wafers in a High-Volume Production Foundry$167K
  • Federal grantDefense · Phase II · Drift Step Recovery Diode (DSRD) for Wideband (WB) and Ultra-Wideband (UWB) Pulse Generation$2M
  • Federal contractDefense · Research And Development$1.5M
  • Federal contractDefense · Performance, Yeild, And Cost Improvement For High Volume$4.7M
  • Federal contractDefense · Progress Report$230K
  • Federal contractDefense · SBIR Phase ** For Topic: A16-066$1.8M
  • Federal grantDefense · Phase II · Robust SiC MOSFET based Power Modules$2M
Show 20 earlier federal awards
  • Federal contractNASA · Igf::ot::igf This Two-phase SBIR Program Targets The Need For Highly Integrated Sic-based Electronics Systems By Developing Gate Drive Circuitry That Can Be Fully Integrated With 4H-SIC Power Switching Devices, Enabling Eventual Realization Of A Monolithic Power Switching Platform. Specifically, The Final Goal Of This Program Is To Develop And Demonstrate A Fully Integrated, Isolated Gate Driver Architecture, Having An Integrated Sic Power Mosfet. In Addition To Integrated Resistors And Capacito$755K
  • Federal contractDefense · Igf::ot::igf Solid State High Voltage Switching Device For Multi-point Initiation SBIR Phase I.$150K
  • Federal grantEnergy · Phase II · 900 V/200 A SiC Schottky Diode fabrication on 150 mm substrates$1M
  • Federal grantEnergy · Phase II · AllSiC power module based boost converter platform for gridtied energy storage applications$1M
  • Federal contractDefense · Igf::ct::igf Robust Sic Mosfet Based Power Modules (N161-066-0489)$150K
  • Federal contractNASA · Igf::ot::igf This Two-phase SBIR Program Targets The Need For Highly Integrated Sic-based Electronics Systems By Developing Analog And Digital Circuits That Can Be Fully Integrated With 4H-SIC Power Switching Devices, Enabling Eventual Realization Of A Monolithic, Highly Integrated Gate Driver Circuit. Specifically, The Final Goal Of This Program Is To Develop And Demonstrate A Fully Integrated, Isolated, High-side/low-side Gate Driver Architecture, Having An Integrated Sic Power Mosfet. In Addi$125K
  • Federal grantNASA · Phase I · Rad-hard 1200 V SiC MOSFETs and Schottky Rectifiers for a 30 kW PPU$125K
  • Federal grantEnergy · Phase I · All-Silicon Carbide power module based boost converter platform for grid-tied energy storage applications$150K
  • Federal contractNASA · High Temperature Applications - Sic Rectifiers, Sic Pin Rectifiers, Sic Junction Transistors$11K
  • Federal contractNASA · Igf::ot::igf Capitalizing On A Strong Expertise In Iii-nitride Epitaxy, Gan-si Power Device Designs, And Widebandgap Power Electronics, Researchers At Genesic Semiconductor Propose A SBIR Program Focused On The Development Of 15 KW/300C-RATED Power Converters Using Algan/gan-si Mos-hfets And Schottky Rectifiers. The Proposed Algan/gan-si Power Converters To Be Developed In This Program Will Usher In A New Generation Of High-efficiency, Low-cost, And Radiation-hard Power Conversion Units On-board$1.5M
  • Federal contractNASA · Igf::ot::igf Capitalizing On A Potent Confluence Of Expertise In Iii-nitride Epitaxy, Gan-si Power Device Designs, And Wide-bandgap Power Electronics, Researchers At Genesic Semiconductor And Cornell University Jointly Propose A SBIR Program Focused On The Development Of 15 KW/300 C-rated Power Converters Using Algan/gan-si Mos-hfets And Schottky Rectifiers. The Proposed Algan/gan-si Power Converters To Be Developed In This Program Will Usher In A New Generation Of High-efficiency, Low-cost, And$200K
  • Federal contractNASA · Monolithic Integrated Sic Super Junction Transistor-jbs Diode (midsjt) Devices Are Used To Construct 500 Oc Capable Motor Control Power Modules For Direct Integration With The Exploration Rovers Required To Operate In Venus-like Environments. The Phase I Of This Proposed Work Will Focus On The Integrated Midsjt Device Development And High-temperature Packaging. Phase II Will Focus On The Integration Of The Midsjt Devices To Construct Full 3-PHASE Inverter Motor Control Modules. Although Sic Is T$100K
  • Federal contractDefense · Research And Development In The Physical, Engineering, And Life Sciences (except Biotechnology)$750K
  • Federal contractDefense · Phase II SBIR$1.4M
  • Federal contractCommerce · Sapphire Wafers$920
  • Federal contractDefense · SBIR Phase I$120K
  • Federal contractDefense · SBIR$750K
  • Federal contractCommerce · SBIR Phase I Award$90K
  • Federal contractDefense · SBIR Research$70K
  • Federal contractDefense · Monthly Progress Reports$100K

Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.

Standing among 72 peers

Line = median

Semiconductors · Device

  • Federal grants#23 · top 32%
  • Granted patents#4 · top 6%
  • Linked publications#7 · top 10%

Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.

Founders and team

No founders are linked to this company yet.

Founders appear once a person is matched to the company through its own patents, grants or filings. We never infer people from social profiles.

Checked: USPTO inventors; federal award principal investigators; SEC Form D related persons · Oct 23, 2026

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What it has protected

USPTO · 26 granted of 38
  • PendingDesign And Manufacture Of Self-aligned Power MosfetsUSPTOApplication 19326601
  • PendingDesign And Manufacture Of Self-aligned Power MosfetsUSPTOApplication 19326579
  • PendingDesign And Manufacture Of Self-aligned Power MosfetsUSPTOApplication 19310799
Show all 38 patent records

Recent research by its founders

  • Dynamic Reverse Bias Reliability Testing of SiC MOSFETs20251 cites
  • Investigation of Advanced Hexagonal Layouts for 650 V SiC MOSFETs20251 cites
  • Impact of Device Design Parameters on 15 kV SiC MOSFETs20222 cites

Related companies, and why

  • PACIFIC MICROCHIP CORP.Similar federal contract value in Semiconductors · $17.7M in contracts
  • OpenLight Photonics, Inc.Similar federal contract value in Semiconductors · $15.5M in contracts
  • Empower RF Systems, Inc.Similar federal contract value in Semiconductors · $14.9M in contracts
  • OZARK INTEGRATED CIRCUITS INCSimilar federal contract value in Semiconductors · $14.4M in contracts
  • AXELLIO INC.Similar federal contract value in Semiconductors · $14.2M in contracts
  • Eureka AerospaceSimilar federal contract value in Semiconductors · $13.4M in contracts

Sources

Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.

How to read this page

Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.

Data freshness

SEC Form D filings through . SBIR and STTR awards through .