KYMA TECHNOLOGIES, INC.
High-quality gallium nitride (GaN) crystal boules and wafers grown via HVPE for power electronics and high-temperature applications
- Sector
- Semiconductors
- Headquarters
- Raleigh, NC
- Total capital
- $9.9M
- Federal grants
- $6.5M
- 14 awards · 2015–2024
- Rank in peer group#3 of 17
- Private capital raised
- None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
- Federal contracts
- $3.4M
- 3 awards · Defense, Commerce
- Rank in Semiconductors#73 of 707
- Granted patents
- 4
- 8 pending · first 2014
- Rank in peer group#3 of 17
Capital timeline
Latest events
- Federal grantDefense · Phase II · BASE$1.2M
- Federal grantDefense · Phase I · Low-Cost Manufacturing of High Quality GaN Substrates$150K
- Federal grantNASA · Phase I · Radiation-Tolerant Vertical GaN Diodes$160K
- Federal grantDefense · Phase II · High Responsivity Optical GaN Switch$750K
- Federal grantNASA · Phase I · Rad-Hard Ga2O3 Diodes$125K
- Federal grantDefense · Phase II · Pulsed Sputter Deposition (PSD) for Efficient Doping in Gallium Nitride (GaN) Epiwafers$750K
- Federal grantEnergy · Phase I · Vertical GaN Switches for EV$200K
Show 10 earlier federal awards
- Federal grantEnergy · Phase I · High Performance Permanent Photocathodes$200K
- Federal grantDefense · Phase I · Development of High Power High Speed WBGS Photoconductive Semiconductor Switch (PCSS) Devices$50K
- Federal grantDefense · Phase I · Electronic grade, single crystal or large-grain polycrystalline diamond wafer development.$150K
- Federal grantDefense · Phase II · Development of Large Area Electronic Grade Single Crystal Diamond Wafers$1.0M
- Federal grantDefense · Phase II · Low-Cost Gallium Nitride (GaN) on Diamond Semiconductors for Microwave Power Amplifiers$1.5M
- Federal grantDefense · Phase I · Epitaxial Technologies for Gallium Oxide Ultra High Voltage Power Electronics$80K
- Federal contractDefense · Igf::ct::igf DOD 2015.A STTR Solicitation Gan For High Rep Rate Pulsed Power$80K
- Federal grantEnergy · Phase I · AlN-Based Power Electronics Device Epiwafer Manufacturing$150K
- Federal contractCommerce · Thin Films$9K
- Federal contractDefense · Development Of Low Defect Density Native Gan Materials$3.3M
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 17 peers
Line = medianSemiconductors · Material
- Federal grants#3 · top 18%
- Granted patents#3 · top 18%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
No founders are linked to this company yet.
Founders appear once a person is matched to the company through its own patents, grants or filings. We never infer people from social profiles.
Checked: USPTO inventors; federal award principal investigators; SEC Form D related persons · Oct 23, 2026
Claim this profile to add your teamWhat it has protected
USPTO · 4 granted of 12- GrantedGroup III Nitride Articles And Methods For Making SameUSPTOUS 9,263,266
- GrantedGroup III Nitride Articles Having Nucleation Layers, Transitional Layers, And Bulk LayersUSPTOUS 9,082,890
- GrantedSingle Crystal Group III Nitride Articles And Method Of Producing Same By Hvpe Method Incorporating A Polycrystalline Layer For Yield EnhancementUSPTOUS 8,871,556
Show all 12 patent records
- Group III Nitride Articles And Methods For Making SameFeb 16, 2016 · US 9,263,266Granted
- Group III Nitride Articles Having Nucleation Layers, Transitional Layers, And Bulk LayersJul 14, 2015 · US 9,082,890Granted
- Single Crystal Group III Nitride Articles And Method Of Producing Same By Hvpe Method Incorporating A Polycrystalline Layer For Yield EnhancementOct 28, 2014 · US 8,871,556Granted
- Single Crystal Group III Nitride Articles And Method Of Producing Same By Hvpe Method Incorporating A Polycrystalline Layer For Yield EnhancementJan 28, 2014 · US 8,637,848Granted
- Non-polar And Semi-polar Gan Substrates, Devices, And Methods For Making ThemApplication PCTUS2008010638Pending
- Group III Nitride Articles And Methods For Making SameApplication PCTUS2006045965Pending
- Method And Apparatus For Producing M'''n Colulmns And M'''n Materials Grown ThereonApplication PCTUS2001044992Pending
- Method And Apparatus For Suppression Of Defects During Gallium Oxide EpitaxyApplication 19482673Pending
- Method And System For Continuous Growth Of Group Iiia Metal-containing FilmsApplication 19601933Pending
- Method And System For Continuous Growth Of Group Iiia Metal-containing FilmsApplication 63615012Pending
- Method And Apparatus For Suppression Of Defects During Gallium Oxide EpitaxyApplication 63502436Pending
- Group III Nitride Templates And Related Heterostructures, Devices, And Methods For Making ThemApplication PCTUS2009042949Pending
Related companies, and why
- EOTRON LLCSimilar federal contract value in Semiconductors · $3.6M in contracts
- OSEMI INCSimilar federal contract value in Semiconductors · $3.5M in contracts
- PSEUDOLITHIC INC.Similar federal contract value in Semiconductors · $3.5M in contracts
- GSI TECHNOLOGY, INC.Similar federal contract value in Semiconductors · $3.4M in contracts
- GONIOTECH LLCSimilar federal contract value in Semiconductors · $3.3M in contracts
- ARKTONICS LLCSimilar federal contract value in Semiconductors · $3.3M in contracts
Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .