TAGORE TECHNOLOGY, INC.
High-power GaN half-bridge integrated circuit for power electronics
- Sector
- Semiconductors
- Headquarters
- ARLINGTON HEIGHTS, IL
- Founded
- 2011
- Latest Form D
- $1.5M, Jun 2023
- Total capital
- $13.4M
- Federal grants
- $1.2M
- 2 awards · 2019–2022
- Rank in peer group#52 of 68
- Private capital raised
- $12.2M
- 3 Form D · last Jun 2023
- 40 months since last filing
- Federal contracts
- None on recordNo federal contract awards found.
- Granted patents
- 10
- 9 pending · first 2017
- Rank in peer group#7 of 68
Capital timeline
Latest events
- Private capital raisedForm D · SEC · 3rd filing$1.5M
- Federal grantNSF · Phase II · STTR Phase II: Integrated Gallium Nitride (GaN) Field Effect Transistor (FET)-Based High Density On Board Electric Vehichle (EV) Charger$978K
- Private capital raisedForm D · SEC · 2nd filing$4M
- Federal grantNSF · Phase I · STTR Phase I: Integrated GaN FET based high density on board EV charger$225K
- Private capital raisedForm D · SEC · 1st filing$6.7M
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 68 peers
Line = medianSemiconductors · Device
- Federal grantsBelow median
- Granted patents#7 · top 10%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
Researcher links verified by same-company patents and grants- Manish ShahResearcherDirectorLinked by 5 patents
- Amitava DasResearcherExecutive Officer, DirectorLinked by $1.2M in grants as PI
- Andrew KauDirectorNamed in SEC Form D filings
- Chae LeeExecutive Officer, DirectorNamed in SEC Form D filings
- Lip-Bu TanDirectorNamed in SEC Form D filings
- Oleg KhaykinDirectorNamed in SEC Form D filings
What it has protected
USPTO · 10 granted of 19- GrantedTemperature-adaptive Gate Driver For Gan SwitchUSPTOUS 12,476,632
- PendingGate Bias Circuit For A Driver Monolithically Integrated With A Gan Power FetUSPTOApplication 18962409
- PendingUnder Voltage Lock-out CircuitUSPTOApplication 18928390
Show all 19 patent records
- Temperature-adaptive Gate Driver For Gan SwitchNov 18, 2025 · US 12,476,632Granted
- Gate Bias Circuit For A Driver Monolithically Integrated With A Gan Power FetMar 20, 2025 · Application 18962409Pending
- Under Voltage Lock-out CircuitFeb 13, 2025 · Application 18928390Pending
- Gate Bias Circuit For A Driver Monolithically Integrated With A Gan Power FetJan 28, 2025 · US 12,212,310Granted
- Under Voltage Lock-out CircuitOct 29, 2024 · US 12,132,470Granted
- Bias-less Dynamic Miller ClampMar 19, 2024 · US 11,936,383Granted
- Linear RegulatorMay 25, 2023 · Application 17530569Pending
- System And Device For High-side SupplyFeb 25, 2020 · US 10,574,229Granted
- High Performance Radio Frequency SwitchMay 21, 2019 · US 10,298,222Granted
- Integrated Gallium Nitride Power Amplifier And SwitchOct 16, 2018 · US 10,103,696Granted
- High Speed Programmable Threshold Gallium Nitride Power LimiterFeb 6, 2018 · US 9,887,637Granted
- Fast Wi-fi Switch With Dynamic Bias CircuitMay 2, 2017 · US 9,641,178Granted
- High Performance Radio Frequency SwitchJan 17, 2017 · US 9,548,731Granted
- Asymmetric High Isolation High Peak Power SwitchApplication 62180117Pending
- Driver For A High-speed Depletion-mode Field-effect TransistorApplication 62180130Pending
- High Performance Radio Frequency SwitchApplication PCTUS2016037921Pending
- Fast Wifi Switch With Dynamic Bias CircuitApplication 62180114Pending
- Programmable Negative Voltage GeneratorApplication 62180122Pending
- High Performance Radio Frequency SwitchApplication 62180100Pending
Related companies, and why
- OSO SEMICONDUCTOR INC.Similar federal contract value in Semiconductors · null in contracts
- Cactus Photonics, Inc.Similar federal contract value in Semiconductors · null in contracts
- ScaleFlux IncSimilar federal contract value in Semiconductors · null in contracts
- 7Th SENSE LLCSimilar federal contract value in Semiconductors · null in contracts
- Omni Design Technologies, Inc.Similar federal contract value in Semiconductors · null in contracts
- SiLC Technologies, Inc.Similar federal contract value in Semiconductors · null in contracts
Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .