LA LUCE CRISTALLINA, INC.

Austin, TX · Semiconductors · Private

Silicon-based photonic integrated circuit wafers with integrated barium titanate optical material

Claim this profile

Follows are private to you and power your alerts

Updated

Sector
Semiconductors
Headquarters
Austin, TX
Total capital
$4.5M
Federal grants
$2.6M
4 awards · 2023–2025
Rank in peer group#16 of 17
Private capital raised
None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
Federal contracts
$1.9M
2 awards · Defense
Rank in Semiconductors#98 of 707
Granted patents
0
4 pending

Capital timeline

202320242025FEDERAL ↑EQUITY ↓Cumulative $4.5M$275K$249K$249K$850K$1.7M$1.2M
202320242025FEDERAL ↑EQUITY ↓Cumulative $4.5M$275K$1.7M$1.2M

Latest events

  • Federal grantNSF · Phase II · SBIR Phase II: Foundry-Compatible Silicon-Integrated Epitaxial Barium Titanate Wafers for Silicon Photonics$1.2M
  • Federal contractDefense · Topic Number: O23B-002 Topic Title: Ultra-compact Wideband Electro-optic Modulator Based On Ferroelectric Materials Proposal Number: O2-2016 Proposal Title: Compact Electro-optic Modulators Based On Barium Titanate On Silicon Platform$1.7M
  • Federal grantDefense · Phase II · Topic Number: O23B-002 Topic Title: Ultra-compact Wideband Electro-optic Modulator Based On Ferroelectric Materials Proposal Number: O2-2016 Proposal Title: Compact Electro-optic Modulators Based On Barium Titanate On Silicon Platform$850K
  • Federal contractDefense · Small Business Technology Transfer Research Compact Electro-optic Modulators Based On Barium Titanate On Silicon Platform$249K
  • Federal grantDefense · Phase I · Small Business Technology Transfer Research Compact Electro-optic Modulators Based On Barium Titanate On Silicon Platform$249K
  • Federal grantNSF · Phase I · STTR Phase I: Silicon-Integrated Epitaxial Barium Titanate (BaTiO3) Chips for Photonics Applications$275K

Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.

Standing among 17 peers

Line = median

Semiconductors · Material

  • Federal grantsBelow median
  • Linked publications#2 · top 12%

Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.

Founders and team

No founders are linked to this company yet.

Founders appear once a person is matched to the company through its own patents, grants or filings. We never infer people from social profiles.

Checked: USPTO inventors; federal award principal investigators; SEC Form D related persons · Oct 23, 2026

Claim this profile to add your team

What it has protected

USPTO · 0 granted of 4
  • PendingThick, Insulating Epitaxial Strontium Titanate, Barium Strontium Titanate Or Barium Titanate On Silicon Wafers And Fabrication Methods ThereforUSPTOApplication PCTUS2025011610
  • PendingTwin-free, Small Lattice Parameter Perovskite Pseudo-substrates On Silicon Carrier Wafers And Fabrication Methods ThereforUSPTOApplication PCTUS2024059251
  • PendingTwin-free, Small Lattice Parameter Perovskite Pseudo-substrates On Silicon Carrier Wafers And Fabrication Methods ThereforUSPTOApplication 63621968
Show all 4 patent records
  • Thick, Insulating Epitaxial Strontium Titanate, Barium Strontium Titanate Or Barium Titanate On Silicon Wafers And Fabrication Methods ThereforApplication PCTUS2025011610Pending
  • Twin-free, Small Lattice Parameter Perovskite Pseudo-substrates On Silicon Carrier Wafers And Fabrication Methods ThereforApplication PCTUS2024059251Pending
  • Twin-free, Small Lattice Parameter Perovskite Pseudo-substrates On Silicon Carrier Wafers And Fabrication Methods ThereforApplication 63621968Pending
  • Thick, Insulating Epitaxial Strontium Titanate, Barium Strontium Titanate Or Barium Titanate On Silicon Wafers And Fabrication Methods ThereforApplication 63621973Pending

Recent research by its founders

  • Effect of Sr interlayer on the epitaxy and band alignment of MgO-buffered Si(100)20260 cites
  • Small effective mass deep all-oxide quantum wells based on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:mi>BaSn</mml:mi> <mml:msub> <mml:mi mathvariant="normal">O</mml:mi> <mml:mn>3</mml:mn> </mml:msub> </mml:mrow> </mml:math>20260 cites
  • <strong>Effect of Sr interlayer on the epitaxy and band alignment of MgO-buffered Si(100)</strong>20260 cites

Sources

Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.

How to read this page

Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.

Data freshness

SEC Form D filings through . SBIR and STTR awards through .