INTEGRA TECHNOLOGIES, INC.
150V GaN/SiC RF pulsed power semiconductor technology and solid-state power amplifiers (SSPAs) for high power microwave applications
- Sector
- Semiconductors
- Headquarters
- El Segundo, CA
- Total capital
- $5.2M
- Federal grants
- $1.3M
- 3 awards · 2017–2025
- Rank in peer group#46 of 68
- Private capital raised
- None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
- Federal contracts
- $3.9M
- 6 awards · NASA, Defense
- Rank in Semiconductors#66 of 707
- Granted patents
- 3
- 2 pending · first 2018
- Rank in peer group#16 of 68
Capital timeline
Latest events
- Federal grantDefense · Phase II · Research And Development$998K
- Federal contractDefense · Research And Development$998K
- Federal grantDefense · Phase I · Advanced 150V GaN Solid State Power Amplifer Topologies for High Power Microwave Applications$139K
- Federal contractDefense · SBIR Phase I - Topic N231-062$238K
- Federal contractDefense · High Efficiency Ss Power Module For Early Warning RADAR System$1.5M
- Federal grantEnergy · Phase I · Solid-State Ultra-High Power Amplifier Modules Based on 100 V RF GaN Technology for LINACS Operating at 325 and 650 MHz$150K
- Federal contractNASA · Igf::ot::igf An Efficient 400W Amplifier For Pulse Spaceborne RADAR Active Remote Sensing Applications At X-band Will Be Investigated. Current X-band RADAR Transmitters Use Twt Devices Requiring Kv Bulky Power Supplies, Or 0.25 Um Gan Solid-state Devices Operating At 28 V Or 50 V At Most, With 40 V Typical Upper Limit. Solid-state Technology Is Desirable For Its Better Swap Figure Of Merit. However, Achieving 400 W At X-band With 28 V Or 50 V Gan Technology Requires Power Combining Of Several Lo$125K
Show 2 earlier federal awards
- Federal contractNASA · Igf::ot::igf An Improved Efficiency Amplifier For High Power Pulse Applications At P-band Will Be Investigated That Will Support Space Based RADAR Systems. Current P-band Pulsed Amplifier Technologies Use Silicon Bi-polar And Ldmos Device Technologies That Have Increased Internal Device Parasitic Characteristics That Lead To Lower Gain And More Difficult Power Matching Over Gan Technologies. Integra Technologies Has Experience With All Three Device Technologies. Integra Also Has The Design And M$967K
- Federal contractNASA · Igf::ot::igf An Improved Efficiency Amplifier For High Power Pulse Applications At P-band Will Be Investigated That Will Support Space Based RADAR Systems. Current P-band Pulsed Amplifier Technologies Use Silicon Bi-polar And Ldmos Device Technologies That Have Increased Internal Device Parasitic Characteristics That Lead To Lower Gain And More Difficult Power Matching Over Gan Technologies. Integra Technologies Has Experience With All Three Device Technologies. Integra Also Has The Design And $125K
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 68 peers
Line = medianSemiconductors · Device
- Federal grantsBelow median
- Granted patents#16 · top 24%
- Linked publications#4 · top 6%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
No founders are linked to this company yet.
Founders appear once a person is matched to the company through its own patents, grants or filings. We never infer people from social profiles.
Checked: USPTO inventors; federal award principal investigators; SEC Form D related persons · Oct 23, 2026
Claim this profile to add your teamWhat it has protected
USPTO · 3 granted of 5- PendingSemiconductor Power Transistor Design With Integrated Auxiliary Gate Conductor For On-chip Cooling And Heat ExtractionUSPTOApplication 18415013
- GrantedSemiconductor Power Device Including Ring Frame For Thermal Impedance ReductionUSPTOUS 10,672,688
- GrantedSemiconductor Power Device Including Wire Or Ribbon Bonds Over Device Active RegionUSPTOUS 10,593,610
Show all 5 patent records
- Semiconductor Power Transistor Design With Integrated Auxiliary Gate Conductor For On-chip Cooling And Heat ExtractionAug 8, 2024 · Application 18415013Pending
- Semiconductor Power Device Including Ring Frame For Thermal Impedance ReductionJun 2, 2020 · US 10,672,688Granted
- Semiconductor Power Device Including Wire Or Ribbon Bonds Over Device Active RegionMar 17, 2020 · US 10,593,610Granted
- Semiconductor Power Device Including Adjacent Thermal Substrate For Thermal Impedance ReductionNov 27, 2018 · US 10,141,238Granted
- Semiconductor Radio Frequency Power Transistor Design With Integrated Auxiliary Gate Conductor For On-chip Cooling And Heat ExtractionApplication 63442946Pending
Recent research by its founders
- A 3D TCAD Thermal vs. Electro-Thermal Analysis of Large Area Discrete RF Power Transistors20252 cites
- Very High-Power RF Transistors and Transistor Amplifiers20251 cites
- On the use of TCAD for the thermal analysis of RF power transistors and its application to a GaN-on-SiC HEMT with a diamond composite flange20244 cites
Related companies, and why
- IQ-Analog CorpSimilar federal contract value in Semiconductors · $4.6M in contracts
- Katsman, VladimirSimilar federal contract value in Semiconductors · $4.5M in contracts
- AXALUME INC.Similar federal contract value in Semiconductors · $4.2M in contracts
- NITRONEX CorpSimilar federal contract value in Semiconductors · $3.9M in contracts
- PRINCETON MICROWAVE TECHNOLOGY INCSimilar federal contract value in Semiconductors · $3.9M in contracts
- CEREBRAS SYSTEMS INCSimilar federal contract value in Semiconductors · $3.7M in contracts
Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .