Global Power Technologies Group, Inc.
Silicon carbide (SiC) MOSFETs with integrated current sense for power electronics
- Sector
- Semiconductors
- Total capital
- $300K
- Federal grants
- $300K
- 2 awards · 2016–2017
- Rank in peer group#2 of 57
- Private capital raised
- None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
- Federal contracts
- None on recordNo federal contract awards found.
- Granted patents
- 2
- 6 pending · first 2017
- Rank in peer group#10 of 57
Capital timeline
Latest events
- Federal grantEnergy · Phase I · Advanced SiC MOSFET for Automotive Applications$150K
- Federal grantEnergy · Phase I · Integrated Silicon Carbide Power Electronic Block$150K
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 57 peers
Line = medianSemiconductors · Device
- Federal grants#2 · top 4%
- Granted patents#10 · top 18%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
No founders are linked to this company yet.
Founders appear once a person is matched to the company through its own patents, grants or filings. We never infer people from social profiles.
Checked: USPTO inventors; federal award principal investigators; SEC Form D related persons · Oct 23, 2026
Claim this profile to add your teamWhat it has protected
USPTO · 2 granted of 8- GrantedSilicon Carbide Planar MOSFET With Wave-Shaped Channel RegionsUSPTOUS 10,950,695
- PendingSemiconductor Device Based On Wideband Gap Semiconductor MaterialsUSPTOApplication 15652112
- PendingGraded And Stepped Epitaxy For Constructing Power Circuits And DevicesUSPTOApplication 15652085
Show all 8 patent records
- Silicon Carbide Planar MOSFET With Wave-Shaped Channel RegionsMar 16, 2021 · US 10,950,695Granted
- Semiconductor Device Based On Wideband Gap Semiconductor MaterialsJan 18, 2018 · Application 15652112Pending
- Graded And Stepped Epitaxy For Constructing Power Circuits And DevicesJan 18, 2018 · Application 15652085Pending
- Silicon Carbide Semiconductor Devices Having Nitrogen-doped InterfaceApr 4, 2017 · US 9,613,810Granted
- Silicon Carbide Semiconductor DevicesJun 16, 2016 · Application 14977466Pending
- Super-junction Edge Termination For Power DevicesMay 5, 2016 · Application 14930424Pending
- Monolithically Integrated Mosfet And Anti-parallel Diode Based On Wide Bandgap SemiconductorsApplication 62363176Pending
- Graded And Stepped Epitaxy To Improve Performance Of Unipolar Vertical Sic Power DevicesApplication 62363173Pending
Related companies, and why
- FASETTO, Inc.Similar federal contract value in Semiconductors · null in contracts
- PICOTEK LLCSimilar federal contract value in Semiconductors · null in contracts
- Saphlux, Inc.Similar federal contract value in Semiconductors · null in contracts
- NANOLUMENS, INCSimilar federal contract value in Semiconductors · null in contracts
- MICRONET SOLUTIONS INC.Similar federal contract value in Semiconductors · null in contracts
- AEHR TEST SYSTEMSSimilar federal contract value in Semiconductors · null in contracts
Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .