CREE INC
Silicon carbide semiconductors and power devices for energy conversion and management
- Sector
- Semiconductors
- Headquarters
- DURHAM, NC
- Latest Form D
- $211M, Aug 2011
- Total capital
- $211M
- Federal grants
- None on recordNo awards found in SBIR/STTR, NIH, NSF or DoD records.
- Private capital raised
- $211M
- 1 Form D · last Aug 2011
- 182 months since last filing
- Federal contracts
- None on recordNo federal contract awards found.
- Granted patents
- 40
- first 2021
- Rank in peer group#1 of 20
Capital timeline
Latest events
- Private capital raisedForm D · SEC · 1st filing$211M
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 20 peers
Line = medianSemiconductors · Material
- Granted patents#1 · top 5%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
From SEC Form D filings- Alan J. RuudDirectorNamed in SEC Form D filings
- Charles M. SwobodaExecutive Officer, DirectorNamed in SEC Form D filings
- Clyde R. HoseinDirectorNamed in SEC Form D filings
- Dolph W. von ArxDirectorNamed in SEC Form D filings
- Franco A. PlastinaDirectorNamed in SEC Form D filings
- Harvey A. WagnerDirectorNamed in SEC Form D filings
Show all 11 people
- John T. KurtzweilExecutive OfficerNamed in SEC Form D filings
- Robert A. IngramDirectorNamed in SEC Form D filings
- Robert L. TillmanDirectorNamed in SEC Form D filings
- Stephen D. KelleyExecutive OfficerNamed in SEC Form D filings
- Thomas H. WernerDirectorNamed in SEC Form D filings
What it has protected
USPTO · 40 granted of 40- GrantedInterconnect Metal Openings Through Dielectric FilmsUSPTOUS 12,666,941
- GrantedMultilayer Encapsulation For Humidity Robustness And Related Fabrication MethodsUSPTOUS 12,598,994
- GrantedGroup Iii-nitride Transistors With Back Barrier Structures And Buried P-type Layers And Methods ThereofUSPTOUS 12,557,322
Show all 40 patent records
- Interconnect Metal Openings Through Dielectric FilmsJun 23, 2026 · US 12,666,941Granted
- Multilayer Encapsulation For Humidity Robustness And Related Fabrication MethodsApr 7, 2026 · US 12,598,994Granted
- Group Iii-nitride Transistors With Back Barrier Structures And Buried P-type Layers And Methods ThereofFeb 17, 2026 · US 12,557,322Granted
- Circuits And Group Iii-nitride Transistors With Buried P-layers And Controlled Gate Voltages And Methods ThereofAug 26, 2025 · US 12,402,346Granted
- Radio Frequency Package Implementing a Window Frame with Edge Plating and Processes of Implementing the SameFeb 11, 2025 · US 12,224,217Granted
- High Performance Semiconductor DeviceDec 3, 2024 · US 12,159,817Granted
- Sidewall Dopant Shielding Methods And Approaches For Trenched Semiconductor Device StructuresSep 17, 2024 · US 12,094,926Granted
- Package With Different Types Of Semiconductor Dies Attached To A FlangeSep 3, 2024 · US 12,080,660Granted
- Integrated Passive Device (ipd) Components And A Package And Processes Implementing The SameMar 19, 2024 · US 11,935,879Granted
- Circuits And Group Iii-nitride High-electron Mobility Transistors With Buried P-type Layers Improving Overload Recovery And Process For Implementing The SameMar 12, 2024 · US 11,929,428Granted
- Group III-Nitride High-Electron Mobility Transistors with Buried P-Type Layers and Process for Making the SameJan 2, 2024 · US 11,862,719Granted
- Device And Process For Fault Detection Of A Power DeviceDec 12, 2023 · US 11,843,240Granted
- Encapsulation Stack For Improved Humidity Performance And Related Fabrication MethodsDec 12, 2023 · US 11,842,937Granted
- Group III Nitride-based Radio Frequency Amplifiers Having Back Side Source, Gate And/or Drain TerminalsDec 5, 2023 · US 11,837,559Granted
- Packaging For RF Transistor AmplifiersDec 5, 2023 · US 11,837,457Granted
- Semiconductor Having a Backside Wafer Cavity for Radio Frequency (RF) Passive Device Integration and/or Improved Cooling and Process of Implementing the SameAug 22, 2023 · US 11,735,538Granted
- Wirebond-Constructed InductorsAug 1, 2023 · US 11,715,722Granted
- Radio Frequency Transistor Amplifiers Having Multi-layer Encapsulations That Include Functional Electrical CircuitsJun 13, 2023 · US 11,677,362Granted
- Semiconductors with Improved Thermal Budget and Process of Making Semiconductors with Improved Thermal BudgetMay 23, 2023 · US 11,658,233Granted
- Monolithic Microwave Integrated Circuits Having Both Enhancement-mode And Depletion Mode TransistorsFeb 28, 2023 · US 11,594,628Granted
- Radio Frequency (RF) Transistor Amplifier Packages With Improved Isolation And Lead ConfigurationsFeb 14, 2023 · US 11,581,859Granted
- Radio Frequency Amplifier Implementing an Input Baseband Enhancement Circuit and a Process of Implementing the SameJan 10, 2023 · US 11,552,597Granted
- High Reliability Semiconductor Devices And Methods Of Fabricating The SameNov 1, 2022 · US 11,488,923Granted
- Structures for Reducing Electron Concentration and Process for Reducing Electron ConcentrationOct 18, 2022 · US 11,476,359Granted
- Die-attach Method To Compensate For Thermal ExpansionAug 30, 2022 · US 11,430,744Granted
- Integrated Circuit Having Die Attach Materials with Channels and Process of Implementing the SameAug 23, 2022 · US 11,424,177Granted
- High Density Pixelated Led And Devices And Methods ThereofJul 12, 2022 · US 11,387,221Granted
- RF Power Amplifier with Combined Baseband, Fundamental and Harmonic Tuning NetworkMay 17, 2022 · US 11,336,253Granted
- Systems and Processes for Increasing Semiconductor Device ReliabilityMar 29, 2022 · US 11,289,441Granted
- Methods for Dicing Semiconductor Wafers and Semiconductor Devices Made by the MethodsMar 29, 2022 · US 11,289,378Granted
- Contact Structures For Semiconductor DevicesMar 22, 2022 · US 11,282,927Granted
- Composite-Channel High Electron Mobility TransistorMar 15, 2022 · US 11,276,765Granted
- Device Carrier Configured for Interconnects, a Package Implementing a Device Carrier Having Interconnects, and Processes of Making the SameFeb 22, 2022 · US 11,257,740Granted
- Group III HEMT and Capacitor That Share Structural FeaturesFeb 22, 2022 · US 11,257,940Granted
- Multi-Stage Decoupling Networks Integrated with On-Package Impedance Matching Networks for RF Power AmplifiersJan 18, 2022 · US 11,228,287Granted
- Asymmetric Doherty Amplifier Circuit with Shunt ReactancesDec 14, 2021 · US 11,201,591Granted
- Radio Frequency Power Circuits Utilizing Coaxial Resonators for Video Bandwidth Improvements and Circuit Size Reduction and a Process of Implementing the SameNov 30, 2021 · US 11,190,153Granted
- Light Emitting Diode PackagesNov 30, 2021 · US 11,189,766Granted
- Power Semiconductor PackageNov 30, 2021 · US D,937,231Granted
- Power Switching Devices With High Dv/dt Capability And Methods Of Making Such DevicesNov 23, 2021 · US 11,184,001Granted
Related companies, and why
- ACTIVEMEMS LLCSimilar federal contract value in Semiconductors · null in contracts
- PHDS COMPANYSimilar federal contract value in Semiconductors · null in contracts
- Orbits Lightwave, Inc.Similar federal contract value in Semiconductors · null in contracts
- ANOKIWAVE, INC.Similar federal contract value in Semiconductors · null in contracts
- Light Wave Holding Company, LLCSimilar federal contract value in Semiconductors · null in contracts
- Edgewater Wireless Systems Inc.Similar federal contract value in Semiconductors · null in contracts
Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .