COOLCAD ELECTRONICS, INC.

Takoma Park, MD · Semiconductors · Private

Silicon Carbide semiconductor devices and chips

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Updated · coolcadelectronics.com

Sector
Semiconductors
Headquarters
Takoma Park, MD
Latest Form D
$375K, Dec 2018
Total capital
$31.9M
Federal grants
$13M
21 awards · 2016–2026
Rank in peer group#6 of 72
Private capital raised
$375K
1 Form D · last Dec 2018
94 months since last filing
Federal contracts
$18.6M
37 awards · NASA, Defense, Commerce
Rank in Semiconductors#21 of 707
Granted patents
None on recordNo USPTO grants. Applications publish after 18 months.

Capital timeline

20082012201620202024FEDERAL ↑EQUITY ↓Cumulative $31.9M2008: $20K across 1 contract2009: $1.5M across 5 contracts2010: $99K across 1 contract2011: $737K across 3 contracts2012: $900K across 2 contracts2013: $1.8M across 2 contracts$1.8M2014: $695K across 1 contract2015: $125K across 1 contract2016: $250K across 2 grants2017: $250K across 2 grants · $1.1M across 1 contract2018: $125K across 1 contract2019: $350K across 2 grants · $950K across 1 contract2020: $125K across 1 grant2021: $2.5M across 3 grants · $417K across 3 contracts$2.9M2022: $1.9M across 4 grants · $2.9M across 5 contracts$4.9M2023: $2.7M across 3 grants · $1.6M across 3 contracts$4.3M2024: $1.2M across 2 grants · $1.6M across 3 contracts$2.9M2025: $150K across 1 grant · $450K across 3 contracts2026: $3.5M across 1 grant · $3.5M across 1 contract$6.9M1st Form D$375K
20082012201620202024FEDERAL ↑EQUITY ↓Cumulative $31.9M2008: $20K across 1 contract2009: $1.5M across 5 contracts2010: $99K across 1 contract2011: $737K across 3 contracts2012: $900K across 2 contracts2013: $1.8M across 2 contracts2014: $695K across 1 contract2015: $125K across 1 contract2016: $250K across 2 grants2017: $250K across 2 grants · $1.1M across 1 contract2018: $125K across 1 contract2019: $350K across 2 grants · $950K across 1 contract2020: $125K across 1 grant2021: $2.5M across 3 grants · $417K across 3 contracts2022: $1.9M across 4 grants · $2.9M across 5 contracts$4.9M2023: $2.7M across 3 grants · $1.6M across 3 contracts$4.3M2024: $1.2M across 2 grants · $1.6M across 3 contracts2025: $150K across 1 grant · $450K across 3 contracts2026: $3.5M across 1 grant · $3.5M across 1 contract$6.9M1st Form D$375K

Latest events

  • Federal contractNASA · SBIR Phase II Sequential 80NSSC26C0025 Manufacturing Radiation Tolerant Silicon Carbide Switches$3.5M
  • Federal grantNASA · Phase II · SBIR Phase II Sequential 80NSSC26C0025 Manufacturing Radiation Tolerant Silicon Carbide Switches$3.5M
  • Federal contractNASA · SBIR I Vertically Integrated Silicon Carbide/silicon Detectors For Uv/vis Multicolor Sensing$150K
  • Federal grantNASA · Phase I · SBIR I Vertically Integrated Silicon Carbide/silicon Detectors For Uv/vis Multicolor Sensing$150K
  • Federal contractCommerce · OU68-25-NEW-262 - Custom Silicon Carbide Transistors$25K
  • Federal contractNASA · FY25 SBIR Phase III - Coolcad Electronics Inc.$275K
  • Federal grantDefense · Phase I · Research And Development$140K
  • Private capital raisedForm D · SEC · 1st filing$375K
Show 51 earlier federal awards
  • Federal contractDefense · Research And Development$140K
  • Federal grantDefense · Phase II · SBIR Phase II Topic A22-006$1.1M
  • Federal contractDefense · SBIR Phase II Topic A22-006$1.1M
  • Federal contractNASA · High Temperature Modular Integrated Sic Power Converter Platform$405K
  • Federal contractDefense · Embedded Entrepreneurship Initiative (eei)$250K
  • Federal grantDefense · Phase II · Highly Efficient 15kW CLLC Resonant Converter System for Military Vehicles, Built Using Wide Bandgap-Based Power Electronics$1.7M
  • Federal grantNASA · Phase II · Integrated SiC Photodiode Arrays for UV-Spectroscopic Applications$900K
  • Federal contractNASA · Integrated Sic Photodiode Arrays For Uv-spectroscopic Applications$1.2M
  • Federal grantDefense · Phase I · Next Generation SiC APD Deep-UV Single-Photon Detectors$111K
  • Federal contractDefense · SBIR Phase I Topic A22-006 (base)$167K
  • Federal contractNASA · Sic Detector Assemblies Quantity 1$150K
  • Federal contractNASA · EO14042 SBIR Phase I Integrated Sic Photodiode Arrays For Uv-spectroscopic Applications$150K
  • Federal grantNASA · Phase I · Silicon Carbide High Temperature Solid State Memory$150K
  • Federal grantEnergy · Phase I · Low-Cost Hybrid SiC/GaN-based Single-Stage Microinverter with Leakage Integrated Planar Magnetics Technology$200K
  • Federal contractDefense · Small Business Innovation Research (SBIR) Phase I, Topic A214-030: Wide Bandgap Bi-directional Converter$260K
  • Federal grantNASA · Phase II · High Temperature Modular Integrated SiC Power Converter Platform$800K
  • Federal contractNASA · E014042 SBIR Phase II High Temperature Modular Integrated Sic Power Converter Platform$1.2M
  • Federal contractNASA · E014042 SBIR Phase II Dual Output Bidirectional Dc-dc Isolated Sic-based Power Converter$1.2M
  • Federal grantNASA · Phase II · Dual Output Bidirectional DC-DC Isolated SiC-based Power Converter$800K
  • Federal grantNASA · Phase II · Radiation Tolerant High Voltage Silicon Carbide Switches$750K
  • Federal contractDefense · SBIR Phase I Research Study$167K
  • Federal grantDefense · Phase I · SiC/GaN Hybrid Solution of 20kW MHz-frequency CLLC Resonant Converter for Military Vehicles$260K
  • Federal contractNASA · High Temperature Sic Modular Power Conversion Platform$125K
  • Federal contractNASA · Dual Output Bidirectional Integrated Dcdc Isolated Sic-based Power Converter For Space Applications$125K
  • Federal grantDefense · Phase II · SiC CMOS Integrated-Circuit High-Temperature Sensing Platform with Enhanced Gate Oxide Reliability$1.5M
  • Federal grantNASA · Phase I · Silicon Carbide Data Logger for a High Temperature Smart Sensor Platform$125K
  • Federal grantDefense · Phase I · SiC Analog to Digital Converter and a High Temperature Smart Sensor Platform$225K
  • Federal grantNASA · Phase I · High Temperature CMOS Control and Power Converter Electronics$125K
  • Federal contractNASA · Integrated On-chip Power For Harsh Environments$950K
  • Federal contractNASA · Coolcad Proposes A High Temperature And Radiation Tolerant Silicon Carbide (sic) Technology That Is Comprised Of An Integrated Circuit And A Complementary Power Device For Use In Power Applications Such As Spacecraft Motor Drive Modules For Robotic Science Probes On Orbiters, Landers, And Rovers. The Proposed On-chip Power Innovation Combines Our Sic Low Power Integrated Circuit Technology With A Sic Power Device To Meet The Power Needs For Robotic Science Probes And Instrumentation With Blockin$125K
  • Federal grantNASA · Phase I · SiC 10um-Pitch UV Imaging Array and APD with Active Pixel Readout$125K
  • Federal grantNASA · Phase I · Silicon Carbide Integrated Circuits for Extreme Environment Operation: High Radiation and High Temperature$125K
  • Federal contractNASA · Igf::ot::igf Coolcad Electronics Has Developed A Patent-pending Technology To Design And Fabricate Silicon Carbide (sic) Mosfet Opto-electronic Integrated Circuits (ics). We Both Fully Design And Fabricate These Sic Opto-electronic Ics In The U.S. Using Our Own Design Methodologies, Sic Process Recipes And In-house Fabrication Facility. We Will Design, Fabricate And Test Sic Extreme, Vacuum And Deep Ultraviolet Photodetectors. We Will Prototype Pn Junction And Schottky Barrier Linear Photodiod$1.1M
  • Federal grantNASA · Phase I · Improving the Response of Silicon Carbide Devices to Cosmic Radiation$125K
  • Federal grantNASA · Phase I · Single Chip EUV, VUV and Deep UV Photodetector System with Integrated Amplifier$125K
  • Federal contractNASA · Igf::ot::igf Coolcad Electronics, Llc, Is Proposing The Design And Fabrication Of Silicon-carbide Based Active Pixel Sensor, Comprising A Very Large Area Sic Uv Photodiode (>4MM2 In Phase I AND>4CM2 In Phase II) With A Monolithically-integrated Readout Circuit. Sic Photodiodes Offer Advantages In Sensitivity, Low Dark Current, High Temperature Operation, And Higher Uv Responsivity Compared To Other Commercial Uv Detector Technologies Such As Gap. These Sensors Have Applications Relevant To Earth$125K
  • Federal contractDefense · Igf::ct::igf Darpa Baa Entitled "short Wave Imager Using Germanium And Cmos Based Structures"$695K
  • Federal contractDefense · Osd SBIR Phase II Topic# OSD11-EP1$1.1M
  • Federal contractDefense · STTR Phase II Topic N11A-T003$750K
  • Federal contractDefense · SBIR Phase 1, Topic # OSD11-EP1$150K
  • Federal contractNASA · Igf::ot::igf Other Function - Silicon Carbide Deep Uv Detectors Can Achieve Large Gains, High Signal-to-noise Ratios And Solar-blind Operation, With Added Benefits Of Smaller Sizes, Lower Operating Voltages, Radiation Hardness, Ruggedness And Scalability. Sic Uv Apds Implementation Is Challenging Due To Some Material Defects, Relatively Not-well Modeled Device Operation, And Very High Absorption Coefficients Near 200NM Wavelengths. The Objective Of This Proposed Work Is To Extend The State-of-$750K
  • Federal contractDefense · Rectenna Development$487K
  • Federal contractDefense · STTR Topic N11A-T003$150K
  • Federal contractNASA · Silicon Carbide Deep Uv Detectors Can Achieve Large Gains, High Signal-to-noise Ratios And Solar-blind Operation, With Added Benefits Of Smaller Sizes, Lower Operating Voltages, Radiation Hardness, Ruggedness And Scalability. The Design, Fabrication And Optimization Of Sic Uv Apds Is Challenging Due To Some Material Defects, Relatively Not-well Modeled Device Operation, And Very High Absorption Coefficients Near 100NM Wavelengths. These Challenges Can Be Overcome With Detailed Co-modeling, Chara$100K
  • Federal contractDefense · Darpa SBIR Phase I$99K
  • Federal contractNASA · We Are Developing Cad Tools, Models And Methodologies For Electronics Design For Circuit Operation In Extreme Environments With A Focus On Very Low Temperature And Radiation Effects. These New Tools Will Help Enable NASA To Design Next Generation Electronics Especially For Planetary Projects Including The Europa Jupiter System Mission. The New Models And Tools Will Be Directly Incorporated Into Industry Standard Cad Products To Ensure Their Usability And Extend Their Applicability To Extreme Env$600K
  • Federal contractNASA · TAS::80 0123::TAS We Are Developing Cad Tools, Models And Methodologies For Electronics Design For Circuit Operation In Extreme Environments With Focus On Very Low Temperatures (<20K). These New Tools And Methodologies Will Give Rise To Circuit Designs That Minimize The Requirements For External Heat Sources That Are Currently Often Necessary For Operation Of Low-temperature Electronics. Such Technology Would Significantly Improve Reliability, Performance And Lifetime Of Electronics That Are Use$564K
  • Federal contractDefense · Darpa SBIR Phase I Award.$99K
  • Federal contractDefense · Modeling And Analysis Of Carbon Nanotube$100K
  • Federal contractNASA · Electronics Modeling And Design For Cryogenic And Radiation Hard Applications We Are Developing Cad Tools, Models And Methodologies For Electronics Design For Circuit Operation In Extreme Environments With A Focus On Very Low Temperature And Radiation Effects. These New Tools And Methodologies Will Help Enable NASA To Design Next Generation Electronics. Such Capabilities Will Significantly Improve Reliability, Performance And Lifetime Of Electronics That Are Used For Space Applications, Includi$100K
  • Federal contractNASA · Computer Aided Analysis And Design.$20K

Federal awards are summed by year (58 awards); hover a bar for the split. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.

Federal first

123months

from COOLCAD ELECTRONICS, INC.’s first federal award to its first private round.

First federal award · Oct 2008
NASA · $20K
First Form D · Dec 2018
$375K · 1st Form D
Awards before first raise
22 awards

An association in public records, not a cause or a prediction.

Standing among 72 peers

Line = median

Semiconductors · Device

  • Federal grants#6 · top 8%

Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.

Founders and team

Researcher links verified by same-company patents and grants
  • Akin AkturkResearcherExecutive Officer, DirectorLinked by $4.1M in grants as PI
  • Neil GoldsmanExecutive Officer, DirectorNamed in SEC Form D filings
  • Siddharth PotbhareExecutive Officer, DirectorNamed in SEC Form D filings

What it has protected

No granted patents are on record.

USPTO usually publishes applications 18 months after filing, so recent applications may not be visible yet. Patents assigned under a different entity name won’t match.

Checked: USPTO granted patents and published applications · Oct 23, 2026

Sources

Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.

How to read this page

Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.

Data freshness

SEC Form D filings through . SBIR and STTR awards through .