Cerfe Labs, Inc.
Cryogenic non-volatile memory (CeRAM) based on correlated electron materials, operating below 1 K for quantum computer control systems
- Sector
- Quantum
- Headquarters
- Austin, TX
- Total capital
- $5.8M
- Federal grants
- $4M
- 6 awards · 2021–2024
- Rank in peer group#14 of 111
- Private capital raised
- None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
- Federal contracts
- $1.8M
- 2 awards · Defense
- Rank in Quantum#29 of 112
- Granted patents
- 14
- 24 pending · first 2018
- Rank in peer group#12 of 111
Capital timeline
Latest events
- Federal grantDefense · Phase II · SBIR II High Temperature Non-volatile Memory Prototype$1.8M
- Federal contractDefense · SBIR II High Temperature Non-volatile Memory Prototype$1.8M
- Federal grantEnergy · Phase II · Novel memory devices for cryogenic control of quantum circuits$1.1M
- Federal grantDefense · Phase II · CeRAM at Radio Frequencies$749K
- Federal grantEnergy · Phase I · Novel memory device for cryogenic control of quantum circuits$206K
- Federal grantDefense · Phase I · Cryogenic memory for supercomputing and space electronics domination$50K
- Federal grantDefense · Phase I · High performance memory with radiation immunity$50K
Show 1 earlier federal award
- Federal contractDefense · Space And Mil-spec Non-volatile Programable Radiofrequency Switch$48K
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 111 peers
Line = medianQuantum · Material
- Federal grants#14 · top 13%
- Granted patents#12 · top 11%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
No founders are linked to this company yet.
Founders appear once a person is matched to the company through its own patents, grants or filings. We never infer people from social profiles.
Checked: USPTO inventors; federal award principal investigators; SEC Form D related persons · Oct 23, 2026
Claim this profile to add your teamWhat it has protected
USPTO · 14 granted of 38- GrantedCorrelated Electron Switch Elements For Brain-based ComputingUSPTOUS 11,636,316
- GrantedCorrelated Electron Device Formed Via Conversion Of Conductive Substrate To A Correlated Electron RegionUSPTOUS 11,522,133
- PendingSemiconducting Ferroelectric Device with Silicon Doped ElectrodeUSPTOApplication 17715716
Show all 38 patent records
- Correlated Electron Switch Elements For Brain-based ComputingApr 25, 2023 · US 11,636,316Granted
- Correlated Electron Device Formed Via Conversion Of Conductive Substrate To A Correlated Electron RegionDec 6, 2022 · US 11,522,133Granted
- Semiconducting Ferroelectric Device with Silicon Doped ElectrodeOct 13, 2022 · Application 17715716Pending
- Fabricating Correlated Electron Material (cem) DevicesSep 20, 2022 · US 11,450,804Granted
- Semiconducting Ferroelectric DeviceSep 15, 2022 · Application 17695497Pending
- Formation Of A Correlated Electron Material (cem)Feb 22, 2022 · US 11,258,010Granted
- Switch Cell DeviceDec 14, 2021 · US 11,201,276Granted
- Correlated Electron SwitchNov 23, 2021 · US 11,183,998Granted
- Methods For Controlling Switching Characteristics Of A Correlated Electron Material DeviceSep 28, 2021 · US 11,133,466Granted
- Access Devices To Correlated Electron SwitchSep 28, 2021 · US 11,133,467Granted
- Correlated Electron Material (cem) Devices With Contact Region Sidewall InsulationJul 27, 2021 · US 11,075,339Granted
- Electrode For Correlated Electron DeviceJul 22, 2021 · Application 16748555Pending
- Switching Device Formed From Correlated Electron MaterialMay 18, 2021 · US 11,011,701Granted
- Correlated Electron Material (cem) DeviceMay 11, 2021 · US 11,005,039Granted
- Dopant Activation Anneal For Correlated Electron DeviceMar 4, 2021 · Application 16554385Pending
- Formation Of Correlated Electron Material (cem) Device Via Dopant Deposition And AnnealDec 22, 2020 · US 10,873,025Granted
- Multi-Layered Structure Having a Barrier LayerNov 12, 2020 · Application 16408452Pending
- Correlated Electron Switch Device Sidewall RestorationSep 17, 2020 · Application 16850875Pending
- Fabrication Of Correlated Electron Material (cem) DevicesSep 17, 2020 · Application 16890881Pending
- Method For Fabrication Of A Cem DeviceAug 13, 2020 · Application 16271377Pending
- Bismuth-Doped Ferroelectric DevicesJul 16, 2020 · Application 16248496Pending
- Fabrication Of Correlated Electron Material Devices With Reduced Interfacial Layer ImpedanceJun 4, 2020 · Application 16725907Pending
- Cem Switching DeviceMay 19, 2020 · US 10,658,587Granted
- Controlling Dopant Concentration In Correlated Electron MaterialsFeb 13, 2020 · Application 16659206Pending
- Correlated Electron Switch Programmable FabricNov 14, 2019 · Application 16525432Pending
- Correlated Electron Material Devices Using Dopant Species Diffused From Nearby StructuresNov 20, 2018 · US 10,134,986Granted
- Fabrication Of Correlated Electron Material DevicesAug 2, 2018 · Application 15939160Pending
- Forming Nucleation Layers In Correlated Electron Material DevicesJun 21, 2018 · Application 15383926Pending
- Method Providing For A Storage ElementAug 24, 2017 · Application 15048778Pending
- Fabrication Of Correlated Electron Material Devices Comprising NitrogenAug 17, 2017 · Application 15046177Pending
- Fabrication And Operation Of Correlated Electron Material DevicesJul 27, 2017 · Application 15385719Pending
- Semiconducting Ferroelectric Device with Conductive Oxide LayersApplication 63172948Pending
- Semiconducting Ferroelectric DeviceApplication 63161113Pending
- Polarizable Semiconducting Ferroelectric Device Including an Electrode Controlled Floating GateApplication 63161135Pending
- Semiconducting Ferroelectric Device with Silicon Doped ElectrodeApplication 63172964Pending
- Electronic Device Stack Formed On A Semiconducting Substrate And Having A Ferroelectric Layer Electrically Isolated Between Insulator LayersApplication 63161125Pending
- Polarizable Semiconducting Ferroelectric DeviceApplication 63212959Pending
- Semiconducting Ferroelectric DeviceApplication PCTUS2022020389Pending
Related companies, and why
- ADVANCED RESEARCH SYSTEMS, INC.Similar federal contract value in Quantum · $1.9M in contracts
- ATLANTIC QUANTUM CORPSimilar federal contract value in Quantum · $1.9M in contracts
- QUNNECT, INCSimilar federal contract value in Quantum · $1.9M in contracts
- QUERA COMPUTING INCORPORATEDSimilar federal contract value in Quantum · $1.7M in contracts
- MILLIMETER WAVE SYSTEMS LLCSimilar federal contract value in Quantum · $1.6M in contracts
- MAYBELL QUANTUM INDUSTRIES, INC.Similar federal contract value in Quantum · $1.5M in contracts
Regulatory activity · Quantum
- Eliminating Regulations Establishing Fellowships in Laboratory Standardization and Testing for Foreign CitizensNational Institute of Standards and Technology
- Eliminating Obsolete Marking Requirements for Toy, Look-Alike, and Imitation FirearmsNational Institute of Standards and Technology
- Eliminating Obsolete Regulations Related to the Advanced Technology Program and the Technology Innovation ProgramNational Institute of Standards and Technology
Rules are matched to sector, not to company. Recent activity in a sector is context rather than a signal about this business — until rules are matched to what a company actually builds, the section is shown as context and nothing more.
Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .