Cambridge Electronics, Inc.
GaN transistor-based 100-W solid-state power amplifier with 90% power-added efficiency at 1 GHz
- Sector
- Semiconductors
- Total capital
- $529K
- Federal grants
- $529K
- 1 award · 2015
- Rank in peer group#23 of 49
- Private capital raised
- None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
- Federal contracts
- None on recordNo federal contract awards found.
- Granted patents
- 12
- 14 pending · first 2016
- Rank in peer group#3 of 49
Capital timeline
Latest events
- Federal grantDefense · Phase II · Gallium Nitride (GaN)-based High Efficiency Switch/Transistor for L-Band RF Power Amplifier Applications$529K
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 49 peers
Line = medianSemiconductors · Device
- Federal grants#23 · top 47%
- Granted patents#3 · top 6%
- Linked publications#1 · top 2%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
Researcher links verified by same-company patents and grants- Bin LuResearcherExecutive Officer, DirectorLinked by 8 patents
- Drew PeckDirectorNamed in SEC Form D filings
- Reed SturtevantDirectorNamed in SEC Form D filings
- Tomas PalaciosExecutive Officer, DirectorNamed in SEC Form D filings
What it has protected
USPTO · 12 granted of 26- GrantedIII-Nitride Diode With A Modified Access RegionUSPTOUS 12,080,807
- GrantedIII-Nitride Transistor With A Modified Drain Access RegionUSPTOUS 11,876,130
- GrantedIII-Nitride Transistor With A Cap Layer For RF OperationUSPTOUS 11,695,052
Show all 26 patent records
- III-Nitride Diode With A Modified Access RegionSep 3, 2024 · US 12,080,807Granted
- III-Nitride Transistor With A Modified Drain Access RegionJan 16, 2024 · US 11,876,130Granted
- III-Nitride Transistor With A Cap Layer For RF OperationJul 4, 2023 · US 11,695,052Granted
- Iii-nitride Transistor With Non-uniform Channel RegionsJul 7, 2022 · Application 17562164Pending
- Transistor Structure With A Stress LayerMay 31, 2022 · US 11,349,003Granted
- Iii-nitride Transistor Device With A Thin BarrierNov 12, 2020 · Application 16869180Pending
- Transistor Structure Having Buried Island RegionsFeb 18, 2020 · US 10,566,192Granted
- Field-plate Structures For Semiconductor DevicesMar 6, 2018 · US 9,911,817Granted
- Capacitively-coupled Field-plate Structures For Semiconductor DevicesFeb 6, 2018 · US 9,887,268Granted
- Hybrid Structure With Separate ControlsSep 5, 2017 · US 9,754,937Granted
- Iii-nitride Semiconductors With Recess Regions And Methods Of ManufactureApr 4, 2017 · US 9,614,069Granted
- Semiconductor Structure With A Spacer LayerJan 3, 2017 · US 9,536,984Granted
- Electric Field Management For A Group Iii-nitride Semiconductor DeviceDec 15, 2016 · Application 15248711Pending
- Semiconductor Structure And Etch Technique For Monolithic Integration Of Iii-n TransistorsNov 22, 2016 · US 9,502,535Granted
- Electric Field Management For A Group Iii-nitride Semiconductor DeviceSep 27, 2016 · US 9,455,342Granted
- Nucleation And Buffer Layers For Group Iii-nitride Based Semiconductor DevicesDec 3, 2015 · Application 14704269Pending
- Iii-nitride Diode With A Modified Access RegionApplication PCTUS2021037821Pending
- Transistor Structure Having Buried Island RegionsApplication PCTUS2015029656Pending
- III-Nitride Transistor With Connected P-Type Layer In Access RegionApplication 63229320Pending
- Nucleation And Buffer Layers For Group Iii-nitride Based Semiconductor DevicesApplication PCTUS2015029382Pending
- Semiconductor Structure And Etch Technique For Monolithic Integration Of Iii-n TransistorsApplication PCTUS2017025685Pending
- Elesctric Field Management For A Group Iii-nitride SemiconductorApplication PCTUS2014066951Pending
- Iii-nitride Transistor With A Modified Drain Access RegionApplication PCTUS2020062816Pending
- Iii-nitride Transistor With A Cap Layer For RF OperationApplication PCTUS2021019627Pending
- Semiconductor Structure With A Spacer LayerApplication PCTUS2016046546Pending
- Field-plate Structures For Semiconductor DevicesApplication PCTUS2016042831Pending
Recent research by its founders
- A mamba-architecture and multi-scale fusion enhanced artificial intelligent framework for precise microstructure segmentation from SEM image to EBSD labeling in medium Mn steel20260 cites
- Bridging the Expert-Public Divide in Urban Greenway Governance: A “Contextualized Translation” Approach for Enhancing Citizen Science20260 cites
- Dynamic Explainable Recommendation with Multi-Feature and Personalized Test-Time Inference20260 cites
Related companies, and why
- Singular Computing LLCSimilar federal contract value in Semiconductors · null in contracts
- Chip Design Systems Inc.Similar federal contract value in Semiconductors · null in contracts
- HAL Technology, LLCSimilar federal contract value in Semiconductors · null in contracts
- Green Mountain Radio Research CompanySimilar federal contract value in Semiconductors · null in contracts
- BRISK COMPUTING LLCSimilar federal contract value in Semiconductors · null in contracts
- FerveretSimilar federal contract value in Semiconductors · null in contracts
Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .