Avalanche Technology Inc
Blockchain platform for enterprise and consumer applications
- Sector
- Software
- Headquarters
- FREMONT, CA
- Founded
- 2006
- Latest Form D
- $10M, Oct 2020
- Total capital
- $103M
- Federal grants
- None on recordNo awards found in SBIR/STTR, NIH, NSF or DoD records.
- Private capital raised
- $103M
- 12 Form D · last Oct 2020
- 73 months since last filing
- Federal contracts
- None on recordNo federal contract awards found.
- Granted patents
- 38
- 2 pending · first 2019
- Rank in peer group#10 of 2705
Capital timeline
Latest events
- Private capital raisedForm D · SEC · 12th filing$10M
- Private capital raisedForm D · SEC · 11th filing$3.5M
- Private capital raisedForm D · SEC · 10th filing$5.3M
- Private capital raisedForm D · SEC · 9th filing$10.3M
- Private capital raisedForm D · SEC · 8th filing$25.3M
- Private capital raisedForm D · SEC · 7th filing$30M
- Private capital raisedForm D · SEC · 6th filing$330K
- Private capital raisedForm D · SEC · 5th filing$5.5M
- Offering registeredForm D · SEC · 4th filing$264K
- Private capital raisedForm D · SEC · 3rd filing$7.5M
- Private capital raisedForm D · SEC · 2nd filing$950K
- Private capital raisedForm D · SEC · 1st filing$4.3M
Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.
Standing among 2705 peers
Line = medianSoftware · Platform
- Granted patents#10 · top 1%
Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.
Founders and team
From SEC Form D filings- Aidar KalievDirectorNamed in SEC Form D filings
- Anand ChandrasekherDirectorNamed in SEC Form D filings
- Don ButlerDirectorNamed in SEC Form D filings
- Eric StangDirectorNamed in SEC Form D filings
- Eric WhitakerExecutive OfficerNamed in SEC Form D filings
- Gaurav GargDirectorNamed in SEC Form D filings
Show all 15 people
- Petro EstakhriExecutive Officer, DirectorNamed in SEC Form D filings
- Rajiv RanjanExecutive Officer, DirectorNamed in SEC Form D filings
- Rob ChandraDirectorNamed in SEC Form D filings
- Robert NetterExecutive OfficerNamed in SEC Form D filings
- Sailesh ChittipeddiDirectorNamed in SEC Form D filings
- Stuart NagaeDirectorNamed in SEC Form D filings
- Umesh PadvalDirectorNamed in SEC Form D filings
- William StewartDirectorNamed in SEC Form D filings
- Will StewartDirectorNamed in SEC Form D filings
What it has protected
USPTO · 38 granted of 40- GrantedMagnetic Memory Device and Method for Using the SameUSPTOUS 12,633,330
- GrantedMemory Cell Including Two Selectors and Method of Making SameUSPTOUS 12,432,931
- GrantedNonvolatile Memory Device Including Dual Memory LayersUSPTOUS 12,382,642
Show all 40 patent records
- Magnetic Memory Device and Method for Using the SameMay 19, 2026 · US 12,633,330Granted
- Memory Cell Including Two Selectors and Method of Making SameSep 30, 2025 · US 12,432,931Granted
- Nonvolatile Memory Device Including Dual Memory LayersAug 5, 2025 · US 12,382,642Granted
- Nonvolatile Memory Device Including Dual Memory LayersApr 22, 2025 · US 12,284,813Granted
- Shielding of Packaged Magnetic Random Access MemoryApr 15, 2025 · US 12,278,195Granted
- Magnetic Memory Element Including Perpendicular Enhancement Layer and Oxide Cap LayerFeb 20, 2025 · Application 18927997Pending
- Multilayered Seed for Perpendicular Magnetic Structure Including an Oxide LayerOct 29, 2024 · US 12,133,395Granted
- Magnetic Memory Element Including Perpendicular Enhancement Layers and Dual Oxide Cap LayersOct 29, 2024 · US 12,133,471Granted
- Magnetic Memory Read Circuit and Calibration Method ThereforDec 26, 2023 · US 11,854,591Granted
- Cross-Point MRAM Including Self-Compliance SelectorDec 19, 2023 · US 11,848,039Granted
- Multilayered Seed for Perpendicular Magnetic Structure Including an Oxide LayerOct 10, 2023 · US 11,785,784Granted
- Magnetic Memory Element Incorporating Dual Perpendicular Enhancement LayersSep 12, 2023 · US 11,758,822Granted
- Locally Timed Sensing of Memory DeviceMar 21, 2023 · US 11,610,616Granted
- Bidirectional Selector Device for Memory ApplicationsDec 27, 2022 · US 11,538,857Granted
- Magnetic Memory Element Incorporating Dual Perpendicular Enhancement LayersAug 16, 2022 · US 11,417,836Granted
- Multilayered Seed for Perpendicular Magnetic StructureMay 31, 2022 · US 11,348,971Granted
- Nonvolatile Memory Sensing Circuit Including Variable Current SourceMar 29, 2022 · US 11,289,142Granted
- Magnetic Memory Read Circuit And Calibration Method ThereforDec 28, 2021 · US 11,211,107Granted
- Magnetic Memory Array Incorporating Selectors and Method for Manufacturing the SameSep 21, 2021 · US 11,127,782Granted
- Magnetic Memory Cell Including Two-Terminal Selector DeviceSep 21, 2021 · US 11,127,787Granted
- Multilayered Seed for Perpendicular Magnetic StructureMar 16, 2021 · US 10,950,659Granted
- Method Of Implementing Magnetic Random Access Memory (mram) For Mobile System-on-chip BootMar 2, 2021 · US 10,936,327Granted
- Magnetic Memory Element Incorporating Perpendicular Enhancement LayerFeb 2, 2021 · US 10,910,555Granted
- Magnetic Random Access Memory With Dynamic Random Access Memory (dram)-like InterfaceNov 17, 2020 · US 10,838,623Granted
- Magnetic Memory and Method for Using the SameNov 10, 2020 · US 10,832,751Granted
- Fast Programming of Magnetic Random Access Memory (MRAM)Oct 27, 2020 · US 10,818,330Granted
- Three-Dimensional Nonvolatile MemoryOct 27, 2020 · US 10,818,731Granted
- Power-Efficient Programming of Magnetic MemoryOct 20, 2020 · US 10,811,072Granted
- Magnetic Random Access Memory With Perpendicular Enhancement LayerJul 28, 2020 · US 10,727,400Granted
- Multilayered Seed Structure for Magnetic Memory Element Including a CoFeB Seed LayerJul 21, 2020 · US 10,720,469Granted
- PERPENDICULAR MAGNETIC TUNNEL JUNCTION (pMTJ) WITH IN-PLANE MAGNETO-STATIC SWITCHING-ENHANCING LAYERMay 5, 2020 · US RE47,975Granted
- Method of Implementing Magnetic Random Access Memory (MRAM) for Mobile System-on-Chip BootApr 21, 2020 · US 10,628,169Granted
- Magnetic Memory Cell Including Two-terminal Selector DeviceMar 17, 2020 · US 10,593,727Granted
- Selector Device Having Asymmetric Conductance for Memory ApplicationsFeb 11, 2020 · US 10,559,624Granted
- Magnetic Memory Incorporating Dual SelectorsDec 31, 2019 · US 10,522,590Granted
- Power-Efficient Programming of Magnetic MemoryDec 24, 2019 · US 10,515,681Granted
- Magnetic Memory Emulating Dynamic Random Access Memory (DRAM)Dec 12, 2019 · Application 16550103Pending
- Magnetic Memory Element Including Magnesium Perpendicular Enhancement LayerNov 26, 2019 · US 10,490,737Granted
- MULTILAYERED SEED STRUCTURE FOR MAGNETIC MEMORY ELEMENT INCLUDING A CoFeB SEED LAYEROct 8, 2019 · US 10,438,997Granted
- Magnetic Memory Emulating Dynamic Random Access Memory (DRAM)Aug 27, 2019 · US 10,395,710Granted
Related companies, and why
- Hedera Hashgraph, LLCSimilar federal contract value in Software · null in contracts
- Figma, Inc.Similar federal contract value in Software · null in contracts
- AccountAbility Tech, Inc.Similar federal contract value in Software · null in contracts
- RoleBotz, Inc.Similar federal contract value in Software · null in contracts
- FixedPoint, Inc.Similar federal contract value in Software · null in contracts
- Nova AI Software Inc.Similar federal contract value in Software · null in contracts
Sources
Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.
How to read this page
Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.
Data freshness
SEC Form D filings through . SBIR and STTR awards through .