AGNITRON TECHNOLOGY, INC.

Chanhassen, MN · Semiconductors · Private

Multicycle rapid thermal annealing (MRTA) system for GaN semiconductor processing with ultrafast sub-second heating/cooling cycles

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Updated · agnitron.com

Sector
Semiconductors
Headquarters
Chanhassen, MN
Total capital
$15.8M
Federal grants
$3.7M
3 awards · 2018–2022
Rank in peer group#33 of 72
Private capital raised
None on recordNo Form D filings on SEC EDGAR. Some raises are not filed.
Federal contracts
$12M
27 awards · Defense, NASA, Interior
Rank in Semiconductors#32 of 707
Granted patents
2
2 pending · first 2024
Rank in peer group#27 of 72

Capital timeline

2013201520172019202120232025FEDERAL ↑EQUITY ↓Cumulative $15.8M$2M$1.8M$2M$1.2M$1.4M$1.2M
2013201720212025FEDERAL ↑EQUITY ↓Cumulative $15.8M$2M$1.8M$2M$1.4M

Latest events

  • Federal contractDefense · Developing Scalable Mocvd Equipment And Process For Alscn And Alscn/gan RF Devices SBIR II D2P2$1.2M
  • Federal contractDefense · Custom Power Supplies With Software And Hardware Integration To Mocvd System For The Fabrication Of Gallium Nitride Thin Films.$35K
  • Federal contractDefense · Maintenance Of Mocvd Systems$50K
  • Federal contractDefense · Agnitemp Uv Blue Fiberoptic Reflectometer For Agilis 500 System In Operation At Nrl$50K
  • Federal contractInterior · Innovative Approaches For Enhanced Doping And Low-resistance Contacts In Aln Diodes$1.4M
  • Federal contractDefense · Agilis 500 Heater Assembly$46K
  • Federal contractDefense · SBIR II "industrial Scale FA2O3 Epitaxial Structures For Next-generation Microwaves"$1.2M
Show 23 earlier federal awards
  • Federal contractDefense · Enabling Industry Scalable Gallium Nitride -based Technology For Heterogeneous Integration Of RF Power Devices Via Van Der Waals 2D H Bn Release Layer$1.2M
  • Federal contractDefense · Software License And Support$10K
  • Federal grantDefense · Phase II · Develop Ultra-Fast Metastable Ion Implant Activation System$1.0M
  • Federal contractDefense · Research And Development$2M
  • Federal contractDefense · Miniature Power Supplies Using BETA-GA203 Electronics For Size, Weight, And Power Reduction On Low-cost, Attritable Aircrafts$50K
  • Federal contractDefense · Onr SBIR PH1$239K
  • Federal contractDefense · Research And Development$1.8M
  • Federal grantDefense · Phase II · Development of Ga2O3 Epitaxial Layers and Heterostructures for Power Device Applications$749K
  • Federal contractDefense · Research And Development Igf::ot::igf$225K
  • Federal contractDefense · Heater Assembly Upgrade Pr# 68-8110-18$27K
  • Federal grantDefense · Phase II · Epitaxial Technologies for Gallium Oxide Ultra High Voltage Power Electronics$2M
  • Federal contractDefense · Igf::ot::igf Service Plan Pr# 68-8172-17$15K
  • Federal contractDefense · Igf::ot::igf STTR Phase Idevelopment Of GA203 Epitaxial Layers And Hetero Structures For Power Device Applications,"$150K
  • Federal contractDefense · Igf::ot::igf SBIR Phase 1, 9 Months$150K
  • Federal contractDefense · Wafer Carrier Pr# 68-8103-17$4K
  • Federal contractDefense · Igf::ct::igf A New Mocvd Platform For Commercially Scalable Growth Of B-GA2O3 Device$150K
  • Federal contractDefense · Heater Assembly$59K
  • Federal contractDefense · Igf::ot::igf First Monthly Technical Report$999K
  • Federal contractDefense · Gas Concent Sensor$17K
  • Federal contractDefense · 2" Sapphire Substrat$12K
  • Federal contractNASA · Igf::ot::igf This Project Is Directed To The Development Of Low-loss, High Power-density Aluminum Nitride (aln)/gallium Nitride (gan) Heterostructure Based Transistors For Enabling High-efficiency Solid State Power Amplifiers (sspa) Needed For Advancing Capabilities Of Future Robotic And Human Exploration Spacecraft. The Aln/gan Heterostructure Is A Particularly Attractive System For Switch-mode Applications Due To The Extremely High Charge Density, High Electron Mobility, High Intrinsic Breakdo$125K
  • Federal contractDefense · Deposition System$543K
  • Federal contractDefense · I Gf::ot::i Gf 1ST Progress Technical Report$150K

Node area is scaled to amount. Form D reports securities sold, which can differ from an announced round; filings are numbered in the order they were made.

Standing among 72 peers

Line = median

Semiconductors · Device

  • Federal grants#33 · top 46%
  • Granted patents#27 · top 38%

Cumulative measures favor older companies. Rankings describe position today, not outcome. Below the median, ranks show as a band rather than a number.

Founders and team

No founders are linked to this company yet.

Founders appear once a person is matched to the company through its own patents, grants or filings. We never infer people from social profiles.

Checked: USPTO inventors; federal award principal investigators; SEC Form D related persons · Oct 23, 2026

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What it has protected

USPTO · 2 granted of 4
Show all 4 patent records
  • Eureka AerospaceSimilar federal contract value in Semiconductors · $13.4M in contracts
  • INDIANA MICROELECTRONICS, LLCSimilar federal contract value in Semiconductors · $12.5M in contracts
  • ADROIT MATERIALS, INC.Similar federal contract value in Semiconductors · $12.4M in contracts
  • NANOSYS, INC.Similar federal contract value in Semiconductors · $10.5M in contracts
  • TRANSWAVE PHOTONICS, LLCSimilar federal contract value in Semiconductors · $10.2M in contracts
  • Power Fingerprinting, IncSimilar federal contract value in Semiconductors · $9.2M in contracts

Sources

Federal grants from SBIR/STTR, NIH, NSF and DoD records. Federal contracts from USAspending.gov. Private capital from SEC Form D. Patents from USPTO. Publications from OpenAlex. Regulatory activity from the Federal Register. Press matched on company name.

How to read this page

Figures show associations in public records, not causes or predictions. Nothing here is investment advice. An em-dash means no record was found under this company's name, not that none exists.

Data freshness

SEC Form D filings through . SBIR and STTR awards through .